Abstract:Pd doped ZnO ultrafine particle (UFP) films were prepared by combining a direct current gas discharge activated reactive evaporation (direct current-gas discharge activated reactive evaporation) and a vacuum flashing evaporation technique. The electronic state structures and depth profiles of the Pd doped ZnO UFP films were investigated using angle resolved x-ray photoelectron spectroscopy. Three surface states of Zn 3d of Pd doped ZnO UFP films are observed, the positions of these states are located at 10.5, … Show more
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