Electronic structure modification of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>KTaO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>single-crystal surface by<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msup><mml:mrow><mml:mi>Ar</mml:mi></mml:mrow><mml:mo>+</mml:mo></mml:msup></mml:math>bombardment

Wadehra, Neha; Tomar, Ruchi; Halder, S. K.; Sharma, Minaxi; Singh, I.; Jena, Nityasagar; Prakash, Balaji; Sarkar, Abir De; Bera, Chandan; Venkatesan, A.; Chakraverty, S.

doi:10.1103/physrevb.96.115423

Cited by 30 publications

(22 citation statements)

References 27 publications

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“…[ 23–25 ] The KTO‐based interfaces are even more interesting because all the ingredients of the Rashba systems : SOC, relativistic conduction electrons, and polar crystal structure are present. [ 26,27 ] Consequences of Rashba effect and related non‐trivial Berry's phase should be reflected in SdH oscillations, [ 6 ] but so far, no SdH oscillations have been reported for any KTO based conducting interfaces to the best of our knowledge. [ 23,24 ]…”

Section: Figurementioning

confidence: 99%

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Kumar

Wadehra²,

Tomar³

et al. 2020

Adv Quantum Tech

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The momentum‐dependent splitting of spin‐bands in an electronic system is known as the “Rashba effect.” Systems with the Rashba effect possess a Dirac point in momentum space, which may act as a source of Berry's phase for the conduction electrons of such system. Herein, the Shubnikov–de Haas oscillations (SdH) at the conducting interface of EuO–KTaO3 (KTO) are reported. The observed SdH oscillations suggest the presence of two Fermi surfaces. For both Fermi surfaces, the presence of a Berry's phase is seen. Strong spin–orbit coupling is also observed in this system. The existence of two Fermi surfaces with Berry's phase along with the signature of strong spin–orbit coupling suggest the formation of Rashba spin‐split bands. As in topological insulators, two‐fold planar Hall effect and anisotropic magnetoresistance are also observed in EuO–KTO. Analyzing the SdH, Hall, and magnetoresistance data, the authors draw a possible band diagram near the Fermi surface.

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Section: Figurementioning

confidence: 99%

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Kumar

Wadehra²,

Tomar³

et al. 2020

Adv Quantum Tech

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“…4 , which is an order of magnitude smaller than 2 Â 10 14 cm À2 of the 2DEG formed at an experimental KTO surface from the ARPES measurements. 24 This difference can be interpreted by the low formation energy for the oxygen vacancies at the KTO surface, 24,46 which allows much more electrons in the 2DEG. For the 3 s ¼ 5% case shown in Fig.…”

Section: B Energy Band Parametersmentioning

confidence: 99%

Strain-enhanced giant Rashba spin splitting in ultrathin KTaO₃ films for spin-polarized photocurrents

Zhang

Liu

2020

RSC Adv.

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“…The corresponding electron concentration of the 2DEG is 2.67 × 10 13 cm −2 , which is an order of magnitude smaller than 2× 10 14 cm −2 of the 2DEG formed at an experimental KTO surface from the ARPES measurements [15]. This difference can be interpreted by the low formation energy for the oxygen vacancies at the KTO surface [15,34], which allows much more electrons in the 2DEG. For the ε s = 5% case shown in Fig.…”

Section: B Energy Band Parametersmentioning

confidence: 84%

Giant Rashba spin splitting in strained KTaO3 ultrathin films for circular photogalvanic currents

Wu,

Zhang,

Liu

2020

Preprint

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Strong Rashba effects at surfaces and interfaces have attracted great attention for basic scientific exploration and practical applications. Here, the first-principles investigation shows that giant and tunable Rashba effects can be achieved in KTaO3 (KTO) ultrathin films by applying biaxial stress. When increasing the in-plane compressive strain nearly to -5%, the Rashba spin splitting energy reaches ER = 140 meV, approximately corresponding to the Rashba coupling constant αR = 1.3 eV Å. We investigate its strain-dependent crystal structures, energy bands, and related properties, and thereby elucidate the mechanism for the giant Rashba effects. Furthermore, we show that giant Rashba spin splitting can be kept in the presence of SrTiO3 capping layer and/or Si substrate, and strong circular photogalvanic effect can be achieved to generate spin-polarized currents in the KTO thin films or related heterostructures, which are promising for future spintronic and optoelectronic applications.

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Electronic structure modification of theKTaO3single-crystal surface byAr+bombardment

Cited by 30 publications

References 27 publications

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Strain-enhanced giant Rashba spin splitting in ultrathin KTaO₃ films for spin-polarized photocurrents

Giant Rashba spin splitting in strained KTaO3 ultrathin films for circular photogalvanic currents

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Electronic structure modification of theKTaO3single-crystal surface byAr+bombardment

Cited by 30 publications

References 27 publications

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO3

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO3

Strain-enhanced giant Rashba spin splitting in ultrathin KTaO3 films for spin-polarized photocurrents

Giant Rashba spin splitting in strained KTaO3 ultrathin films for circular photogalvanic currents

Contact Info

Product

Resources

About

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Strain-enhanced giant Rashba spin splitting in ultrathin KTaO₃ films for spin-polarized photocurrents