Electronic structure of 8-hydroxyquinoline aluminum (alq3)/metal interfaces studied by UV photoemission

Ishii, Hisao; Yoshimura, Daisuke; Sugiyama, K.; Narioka, S.; Hamatani, Y.; Kawamoto, Ippei; Miyazaki, Takafumi; Ouchi, Yukio; Seki, Kazuhiko

doi:10.1016/s0379-6779(97)80286-x

Cited by 32 publications

(10 citation statements)

References 4 publications

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“…First, these metals can directly react with the organic material, and second, residual oxygen in the vacuum vessel during metal deposition in HV (or subsequent exposure to air) leads to the (partial) formation of metal oxide, [80] whose workfunction can be rather different from that of the pristine metal. For instance, one of the most prominent luminescent and electron-transporting materials, Alq 3 , reacts with Al and Mg to form organometallic complexes, [23,[81][82][83][84][85] which have new intragap states. Also, many other conjugated materials [86][87][88] react with Al and Mg, thus leading to a new distribution of occupied and unoccupied levels at such organic-metal interfaces.…”

Section: Low-work-function Cathodesmentioning

confidence: 99%

Organic Electronic Devices and Their Functional Interfaces

2007

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A most appealing feature of the development of (opto)electronic devices based on conjugated organic materials is the highly visible link between fundamental research and technological advances. Improved understanding of organic material properties can often instantly be implemented in novel device architectures, which results in rapid progress in the performance and functionality of devices. An essential ingredient for this success is the strong interdisciplinary nature of the field of organic electronics, which brings together experts in chemistry, physics, and engineering, thus softening or even removing traditional boundaries between the disciplines. Naturally, a thorough comprehension of all properties of organic insulators, semiconductors, and conductors is the goal of current efforts. Furthermore, interfaces between dissimilar materials-organic/organic and organic/inorganic-are inherent in organic electronic devices. It has been recognized that these interfaces are a key for device function and efficiency, and detailed investigations of interface physics and chemistry are at the focus of research. Ultimately, a comprehensive understanding of phenomena at interfaces with organic materials will improve the rational design of highly functional organic electronic devices.

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Section: Low-work-function Cathodesmentioning

confidence: 99%

Organic Electronic Devices and Their Functional Interfaces

2007

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“…First, these metals often react with organic semiconductors, and second, residual oxygen in the vacuum vessel during metal deposition in HV (or subsequent exposure to air) leads to (partial) metal-oxide formation [24], whose work function can be rather different from that of the pristine metal. For instance, one of the most prominent luminescent and electron transporting materials, Alq 3 , reacts with Al and Mg to form organometallic complexes [25][26][27][28][29][30], which exhibit intra-gap states that pin E F . Also many other conjugated materials [31][32][33] react with Al and Mg, leading to a new distribution of occupied and unoccupied levels at such organic/metal interfaces.…”

Section: Low Work Function Electrodesmentioning

confidence: 99%

Electronic structure of interfaces with conjugated organic materials

Koch

2012

Physica Rapid Research Ltrs

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The function and efficiency of most organic electronic and opto‐electronic devices greatly depend on the electronic structure of the interfaces therein. Charge injection from electrical contacts into the organic semiconductor, charge extraction, or exciton dissociation at organic semiconductor heterojunctions are crucial processes that must be optimized for high device efficiency. Consequently, the energy levels at these interfaces must be matched to allow for optimal performance. The key mechanisms that determine the energy level alignment at organic/electrode and organic/organic interfaces are reviewed, and methods to adjust the levels at such interfaces are presented. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…[31][32][33] Therefore, it is not discussed in detail here. Some aspects, however, are worth recalling in order to facilitate the discussions below.…”

Section: A Electronic Structure Of Alqmentioning

confidence: 99%

Electronic structure of tris(8-hydroxyquinoline) aluminum thin films in the pristine and reduced states

Johansson

Osada

Stafström

et al. 1999

The Journal of Chemical Physics

141

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The electronic structure of tris͑8-hydroxyquinoline͒ aluminum (Alq 3 ) has been studied in the pristine molecular solid state as well as upon interaction ͑doping͒ with potassium and lithium. We discuss the results of a joint theoretical and experimental investigation, based on a combination of x-ray and ultraviolet photoelectron spectroscopies with quantum-chemical calculations at the density functional theory level. Upon doping, each electron transferred from an alkali metal atom is stored on one of the three ligands of the Alq 3 molecule, resulting in a new spectral feature ͑peak͒ in the valence band that evolves uniformly when going from a doping level of one to three metal atoms per Alq 3 molecule.

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Electronic structure of 8-hydroxyquinoline aluminum (alq3)/metal interfaces studied by UV photoemission

Cited by 32 publications

References 4 publications

Organic Electronic Devices and Their Functional Interfaces

Organic Electronic Devices and Their Functional Interfaces

Electronic structure of interfaces with conjugated organic materials

Electronic structure of tris(8-hydroxyquinoline) aluminum thin films in the pristine and reduced states

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