Electronic structure of Ag-induced<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msqrt><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msqrt></mml:mrow><mml:mrow><mml:mrow><mml:mrow /></mml:mrow></mml:mrow><mml:mo>×</mml:mo><mml:mrow><mml:msqrt><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msqrt></mml:mrow><mml:mrow><mml:mrow><mml:mrow /></mml:mrow></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msqrt><m

Tong, Xiao; Ohuchi, Satoru; Sato, Norio; Tanikawa, Takehiro; Nagao, Tadaaki; Matsuda, Ichiro; Aoyagi, Yoshinobu; Hasegawa, Shuji

doi:10.1103/physrevb.64.205316

Cited by 51 publications

(62 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is consistent with the experimental result in Ref. [6] in which the S 1 band is actually detected at theΓ 2 in the third √ 3 × √ 3-SBZ. But from the explanation of Ref.…”

Section: M(k) ∝ (Ksupporting

confidence: 82%

“…Previous ARPES studies revealed a parabolic surface-state band (S 1 band) crossing Fermi level, having a circular Fermi surface (Fermi ring) around Γ points. However, the rings were observed only in the second √ 3 × √ 3-surface Brillouin zones (SBZs), but not in the first SBZ [4][5][6][7][8][9][10][11][12]. It has been proposed that the phenomenon is originated from a coupling of the S 1 surface state with the bulk states of Si substrate crystal, because there is an overlap in energy-momentum space between the S 1 state and bulk states only in the first SBZ [9].…”

mentioning

confidence: 99%

See 1 more Smart Citation

Photoemission Structure Factor Effect for Fermi Rings of the Si(111)√3×√3-Ag Surface

Hirahara

Matsuda

Hasegawa

2004

e-J. Surf. Sci. Nanotechnol.

Self Cite

View full text Add to dashboard Cite

The energy contour at Fermi level (Fermi surface) of the Si(111) √ 3 × √ 3-Ag superstructure was measured in several surface Brillouin zones (SBZs) by high resolution angle-resolved photoemission spectroscopy (ARPES). Fermi rings centered at Γ points were observed only in the second SBZs, but missing in the first SBZ. This phenomenon was successfully reproduced by a calculation of the optical transition matrix based on a simple tightbinding approximation for the surface topmost-layer Ag atoms; the intensity in the first SBZ is diminished by destructive interferences in the matrix elements (i.e., photoemission structure factor). Thus with the known atomic orbital components of the surface structure, we can predict the photoemission intensity distribution and correctly understand the band structure. [DOI: 10.1380[DOI: 10. /ejssnt.2004 Keywords: Angle-resolved photoemission spectroscopy; Fermi surface; Photoemission structure factor; Surface state; Band dispersion; Ag; Si Angle-resolved photoemission spectroscopy (ARPES) has been a powerful tool to determine electronic structures (band dispersion and Fermi surface) of a solid material, especially crystal surfaces. However, the technique often enables to detect the bands only in the limited (surface) Brillouin zones though the band structures should repeat in every Brillouin zone. In other cases the observed intensity distributions of band structures sometimes look asymmetric depending on the polarization of exciting light. These phenomena are in many cases due to k-dependent transition probability of electrons from the initial to the final states in the photoemission process. This complication sometimes raises discrepancies among researchers in the band structure determination. A solution for this issue is to record the photoemission intensity distribution across the full hemisphere for both polar and azimuthal emission angles covering several Brillouin zones [1][2][3]. This is owing to recent developments of bright excitation sources and high-resolution electron analyzers with parallel detectors.It is well known that ARPES measurements of the Si(111) √ 3 × √ 3-Ag surface, one of the most widely studied prototype of metal-on-semiconductor systems, show such a property. Previous ARPES studies revealed a parabolic surface-state band (S 1 band) crossing Fermi level, having a circular Fermi surface (Fermi ring) around Γ points. However, the rings were observed only in the second √ 3 × √ 3-surface Brillouin zones (SBZs), but not in the first SBZ [4][5][6][7][8][9][10][11][12]. It has been proposed that the phenomenon is originated from a coupling of the S 1 surface state with the bulk states of Si substrate crystal, because there is an overlap in energy-momentum space between the S 1 state and bulk states only in the first SBZ [9]. Here, we show another explanation for it in terms of the k-dependent transition probability, i.e., an interference effect in the matrix elements of optical transition, socalled photoemission structure factor (PSF) or Brillouinzone-selection e...

show abstract

“…This is consistent with the experimental result in Ref. [6] in which the S 1 band is actually detected at theΓ 2 in the third √ 3 × √ 3-SBZ. But from the explanation of Ref.…”

Section: M(k) ∝ (Ksupporting

confidence: 82%

mentioning

confidence: 99%

Photoemission Structure Factor Effect for Fermi Rings of the Si(111)√3×√3-Ag Surface

Hirahara

Matsuda

Hasegawa

2004

e-J. Surf. Sci. Nanotechnol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Ref. [28] also reports that the S 1 state is excited only by the component of the photoelectric vector parallel to the surface, i.e., the state consists mainly of p x and p y components [24,28]. However, we clearly observe the state for grazing incidence of the light (θ i = 73 0 corresponds to k x = 1.09Å -1 in Fig.…”

Section: Si(111) 3u 3-agmentioning

confidence: 72%

Fermi surfaces of surface states on Si(111)-Ag, Au

et al. 2002

View full text Add to dashboard Cite

Metallic surface states on semiconducting substrates provide an opportunity to study low-dimensional electrons decoupled from the bulk. Angle resolved photoemission is used to determine the Fermi surface, group velocity, and effective mass for surface states on Si(111)√3×√3-Ag, Si(111)√3×√3-Au, and Si(111)√21×√21-(Ag+Au). For Si(111)√3×√3-Ag the Fermi surface consists of small electron pockets populated by electrons from a few % excess Ag. For Si(111)√21×√21-(Ag+Au) the added Au forms a new, metallic band. The √21×√21 superlattice leads to an intricate surface umklapp pattern and to minigaps of 110 meV, giving an interaction potential of 55 meV for the √21×√21 superlattice.

show abstract

“…Thus, the dramatic change of S1 (Si trimers) might originate from a charge effect, i.e., an uneven redistribution of charges caused by K or Cs atoms. According to STM studies of the Ag/ Si͑111͒ ͱ 3 ϫ ͱ 3 surface, 10,11,22 The remaining three Si trimers that appear grey in filled-state STM images form the third type, which has surface density of states in an energy range of 0.5-1.5 eV below the Fermi level. If one just counts the number of Si trimers, the ratio of the three types is 1:3:3.…”

Section: Resultsmentioning

confidence: 99%

Surface electronic structure ofK- andCs-induced21×<

2004

View full text Add to dashboard Cite

A ͱ 21ϫ ͱ 21 reconstruction has been formed by adding either K or Cs atoms on the Ag/ Si͑111͒ ͱ 3 ϫ ͱ 3 surface at 120 K. The electronic structures of these surfaces have been studied by angle-resolved valence band and core-level spectroscopy. In similarity with Ag or Au adatoms, the presence of K or Cs adatoms on Ag/ Si͑111͒ ͱ 3 ϫ ͱ 3 results in a metallic ͱ 21ϫ ͱ 21 surface. The formation of two surface bands near the Fermi level can be explained by band folding of a partially occupied surface band originating from the underlying Ag/ Si͑111͒ ͱ 3 ϫ ͱ 3 surface. A detailed analysis of the Si 2p core-level spectra of the above surfaces is presented and compared to the Ag/ Si͑111͒ ͱ 3 ϫ ͱ 3 surface. In the case of Ag/ Si͑111͒ ͱ 3 ϫ ͱ 3, we find that the metallic tail of the Si 2p spectra is related to extra Ag. Both the valence band and the Si 2p spectra of the Ag/ Si͑111͒ ͱ 3 ϫ ͱ 3 surface show that the surface is semiconducting after annealing at ϳ600°C.

show abstract

Electronic structure of Ag-induced3×3and

Cited by 51 publications

References 23 publications

Photoemission Structure Factor Effect for Fermi Rings of the Si(111)√3×√3-Ag Surface

Photoemission Structure Factor Effect for Fermi Rings of the Si(111)√3×√3-Ag Surface

Fermi surfaces of surface states on Si(111)-Ag, Au

Surface electronic structure ofK- andCs-induced21×<

Contact Info

Product

Resources

About