Electronic structure of copper studied by electron momentum spectroscopy

Vos, Maarten; Kheifets, Anatoli; Bowles, Cameron A; Chen, C.; Weigold, E.; Aryasetiawan, Ferdi

doi:10.1103/physrevb.70.205111

Cited by 11 publications

(8 citation statements)

References 27 publications

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“…At zero momentum, we see a peak at 9.1 š 0.5 eV binding energy for Cu, 12.1 š 0.5 eV for Si, and 11.3 š 0.5 eV for the Si-Cu sample. These values are consistent with previous findings for the bottom of the band for Cu 8 and Si. 5 For the Si-on-Cu sample, the peak is at an intermediate position indicating that the occupied band width of the reacted layer is inbetween that of Cu and Si.…”

Section: Resultssupporting

confidence: 94%

“…1 This technique has been applied to measure the electronic structure of polycrystalline copper 2,3 and amorphous silicon samples, 4 and more recently single-crystalline silicon 5 -7 and copper 8 samples as well. It relies on high-energy transfer collisions between an energetic incoming electron (energy of several 10's of keV) with a target electron, which is subsequently ejected from the sample.…”

Section: Introductionmentioning

confidence: 99%

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Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

Nixon

Vos

Bowles

et al. 2006

Surf. Interface Anal.

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The Cu-Si interface was studied by electron momentum spectroscopy. A thick disordered interface is formed if one material is deposited on the other. Electron momentum spectroscopy measures intensity as a function of binding energy and target electron momentum. Momentum resolution is demonstrated to be very helpful in interpreting the data, even for these disordered interfaces. The interface layer has a well-defined electronic structure, different from either Si or Cu, and consistent with silicide formation. Information is obtained about the total bandwidth of the interface compound, effective Brillouin zone size and Fermi radius. No clear differences are observed in the electronic structure of the interface layer for Si deposited on Cu or Cu deposited on Si.

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Section: Resultssupporting

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

Nixon

Vos

Bowles

et al. 2006

Surf. Interface Anal.

Self Cite

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show abstract

“…In this letter we present threshold studies on electron emission for grazing impact of fast atoms on atomically clean metal surfaces which allow us to map Fermi momenta of conduction electrons as a function of distance from the topmost surface layer. This is conceptually similar to electron momentum spectroscopy (EMS) [10,11] where keV electrons are scattered in (e, 2e) experiments within the bulk of thin metal films. In our case, however, projectiles are specularly reflected in front of the surface plane and thus specifically probe the solid-vacuum interface.…”

mentioning

confidence: 80%

Fermi momentum above metal surface from electrons ejected by impact of He atoms

2006

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“…[59][60][61] for a description of their band structures). Next, we focus our attention on Cu, a more challenging system whose electronic structure has been thoroughly studied, both experimentally [62,63] and theoretically [20,[64][65][66]. The use of PPA for Cu has been shown to be problematic [20] and, for this reason, copper is not only an important test case for the application of MPA and the description of intra-band effects, but also provides a better understanding of the applicability of PPA.…”

Section: Resultsmentioning

confidence: 99%

Efficient full frequency GW for metals using a multipole approach for the dielectric screening

Leon¹,

Ferretti²,

Varsano³

et al. 2023

Preprint

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The properties of metallic systems with important and structured excitations at low energies, such as Cu, are challenging to describe with simple models like the plasmon pole approximation (PPA), and more accurate and sometimes prohibitive full frequency approaches are usually required. In this paper we propose a numerical approach to GW calculations on metals that takes into account the frequency dependence of the screening via the multipole approximation (MPA), an accurate and efficient alternative to current full-frequency methods that was recently developed and validated for semiconductors and overcomes several limitations of PPA. We now demonstrate that MPA can be successfully extended to metallic systems by optimizing the frequency sampling for this class of materials and introducing a simple method to include the q → 0 limit of the intra-band contributions. The good agreement between MPA and full frequency results for the calculations of quasi-particle energies, polarizability, self-energy and spectral functions in different metallic systems confirms the accuracy and computational efficiency of the method. Finally, we discuss the physical interpretation of the MPA poles through a comparison with experimental electron energy loss spectra for Cu.

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Electronic structure of copper studied by electron momentum spectroscopy

Cited by 11 publications

References 27 publications

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy: the Cu/Si interface

Fermi momentum above metal surface from electrons ejected by impact of He atoms

Efficient full frequency GW for metals using a multipole approach for the dielectric screening

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