Electronic structure of Nb-Ta (001) superlattices

Velasco, V.R.; Baquero, R.; Brito-Orta, R.A.; Garcı́a-Moliner, F.

doi:10.1088/0953-8984/1/36/009

Cited by 10 publications

(4 citation statements)

References 20 publications

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“…We have applied previously this formalism to surfaces 10,11 , interfaces 12,13 and superlattices 19 . Now we present our results.…”

Section: 3132mentioning

confidence: 99%

“…In previous papers, [9][10][11][12][13][14][15][16] in conjunction with the known surface Green's function matching method (SGFM) 17 , we have used a tight-binding formulation to calculate the electronic band structure, the surface, the surface induced, and the interface states for several systems in a consistent way with the known bulk band structure calculations. The method can also be applied to overlayers, 18 superlattices, 8,19 phonons 20 and to calculate transport properties 21 in heterostructures as quantum wells, for example, by making use of the well known method by Keldysh.…”

Section: Introductionmentioning

confidence: 99%

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Semiconductor Interfaces

1987

Springer Proceedings in Physics

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In previous work we have discussed in detail the electronic band structure of a (001) oriented semi-infinite medium formed by some II-VI zinc blende semiconductor compounds in the valence band range of energy. Besides the known bulk bands (hh, lh and spin-orbit splitting), we found two characteristic surface resonances, one corresponding to the anion termination and another to the cation one. Furthermore, three (001)-surface-induced bulk states with no-dispersion from Γ − X are also characteristic of these systems.In this work we present the electronic band structure for (001)-CdTe interfaces with some other II-VI zinc blende semiconductors. We assume ideal interfaces. We use tight binding Hamiltonians with an orthogonal basis (sp 3 s * ). We make use of the well-known Surface Green's Function Matching method to calculate the interface band structure. In our calculation the dominion of the interface is constituted by four atomic layers. We consider here anion-anion interfaces only. We have included the non common either anion or cation (CdTe/ZnSe), common cation (CdTe/CdSe), and common anion (CdTe/ZnTe) cases. We have aligned the top of the the valence band at the whole interface dominion as the boundary condition. 1The overall conclusion is that the interface is a very rich space where changes in the band structure with respect to the bulk do occur. This is true not only at interfaces with no common atoms but also at the ones with either common cation or anion atoms irrespective to the fact that the common atomic layers are facing or not each other at the interface.Finally, we found that the (001)-surface-induced bulks states reappear at the interface in contrast to the pure (001)-surface resonances which disappear. This confirm our previous interpretation of such states as bulk states. Their behaviour is very interesting at the interface. We have refine the terminology for these states to up-date it to the new results and have call them Frontier induced semi-infinite medium (FISIM) states. They might well appear also in quantum wells and superlattices and have influence in the transport properties of these systems.

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“…We have applied previously this formalism to surfaces 10,11 , interfaces 12,13 and superlattices 19 . Now we present our results.…”

Section: 3132mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Semiconductor Interfaces

1987

Springer Proceedings in Physics

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“…They implemented a set of tight-binding parameters for the series of chalcopyrites CuB III C V I with B = Al, Ga, In and C = S, Se, T e that describe quite accurately the bulk electronic band structure and have been used successfully [9,10] as input to calculate the surface electronic band structure using the Surface Green's Function Matching (SGFM) method [11]. Interfaces [12] and superlattices [13] can also been described successfully by this method.…”

Section: Introductionmentioning

confidence: 99%

(001) Ideal-surface band structure for the series of Cu-based chalcopyrites

Tototzintle-Huitle

Baquero

2007

Journal of Physics and Chemistry of Solids

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“…For discrete systems this can be done with great ease from the transfer matrices. The combination of SGFM formalism and transfer matrix algorithms proves very useful in practice, as is seen in many physical applications like electronic states in semiconductor interfaces [4, 51, metal surfaces [6] and semiconductor [7] or metallic [8] superlattices as well as phonons in sandwich structures [9], metal interfaces [IO], periodic intercalation compounds [I I] or metallic superlattices [I21 and others.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the full matched Green function and wavefunction from the transfer matrices

Velasco¹,

Garcı́a-Moliner²,

Rodrı́guez-Coppola³

et al. 1990

Phys. Scr.

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The full Green function of an arbitrary medium is related to its transfer matrix. For matched systemse.g. a single heterojunction, a quantum well or a superlatticethe full matched Green function and wavefunction can be finally expressed in terms of the transfer matrices of the constituent media. These can be evaluated by efficient numerical algorithms and one then has a method for doing practical calculation. This is demonstrated by making two physical applications. The analysis is complete for problems involving one differential equation.

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Electronic structure of Nb-Ta (001) superlattices

Cited by 10 publications

References 20 publications

Semiconductor Interfaces

Semiconductor Interfaces

(001) Ideal-surface band structure for the series of Cu-based chalcopyrites

Analysis of the full matched Green function and wavefunction from the transfer matrices

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