Electronic structure of nickel silicide in subhalf-micron lines and blanket films: An x-ray absorption fine structures study at the Ni and Si L3,2 edge

Naftel, S. J.; Coulthard, I.; Sham, Tsun‐Kong; Xu, Dan‐Xia; Erickson, Leonard C.; Das, Samaresh

doi:10.1063/1.124049

Cited by 6 publications

(5 citation statements)

References 8 publications

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“…But the form and strength of the absorption line in the spectra of the spheres are the same as reported for the silicides. Especially the chemical shift of 2 eV between the absorption lines of Ni metal and NiSi [24] is found in the sphere's contamination spectra.…”

Section: Identification Of the Chemical Composition Of The Metallic C...mentioning

confidence: 94%

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Surface layer determination for the Si spheres of the Avogadro project

et al. 2011

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For the accurate determination of the Avogadro constant, two 28Si spheres were produced, whose macroscopic density, in addition to other values, must be determined. To make a contribution to the new definition of the kilogram, a relative standard uncertainty of less than 2 × 10−8 has to be achieved. Each silicon surface is covered by a surface layer (SL). Consequently, correction parameters for the SL are determined to be applied to the mass and volume determination of the enriched spheres. With the use of a large set of surface analysing techniques, the structure of the SL is investigated. An unexpected metallic contamination existing on the sphere surface enlarges the uncertainty contribution of the correction parameters above the originally targeted value of 1 × 10−8. In the framework of this investigation this new obstacle is resolved in two ways. A new combination of analytical methods is applied to measure the SL mass mSL and the thickness dSL, including this new contamination, with an uncertainty of u(mSL) = 14.5 µg and 14.4 µg, respectively, and u(dSL) = 0.33 nm and 0.32 nm for the 28Si spheres AVO28-S5 and AVO28-S8, respectively.In the second part of the work, the chemical composition of these metallic contaminations is found to be Cu, Ni and Zn silicide compounds. For the removal of this contamination, a special procedure is developed, tested and applied to the spheres to produce the originally expected surface structure on the spheres. After the application of this new procedure the use of x-ray reflectometry directly at the spheres will be possible. It is expected to reduce the uncertainty contribution due to the SL down to 1 × 10−8.

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Section: Identification Of the Chemical Composition Of The Metallic C...mentioning

confidence: 94%

“…The L absorption line of Ni and Cu, respectively, is measured for an incident angle of 45 • around the L absorption edge (see figure 5). Again the measurements are carried out at contaminated spheres made by CSIRO and compared with those published for Ni metal, NiSi and NiSi 2 [24].…”

Section: Identification Of the Chemical Composition Of The Metallic C...mentioning

confidence: 99%

Surface layer determination for the Si spheres of the Avogadro project

et al. 2011

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“…Although this appears to be large, the actual internal surface area of PS is significantly larger than the nominal surface [2], thus, complete reduction of all the silver ions is not unexpected even in the most concentrated case. The FLY edge jumps are more representative of the relative amount of Ag due to a greater sampling depth [9,10]. All spectra have been normalized to the incident photon flux and have been subtracted with a pre-edge background so that the edge jump is related to the relative amount of Ag.…”

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confidence: 99%

Semiconductor Growth and Junction Formation within Nano-Porous Oxides

Coulthard

Sammynaiken

Naftel

et al. 2000

phys. stat. sol. (a)

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We report a systematic study of the chemical properties of porous silicon as a moderate reducing agent and a nano-structure template for the reductive formation of nano-metal cluster aggregates. This study investigates the consequences of the interaction of silver ions in aqueous solution with porous silicon. The nature of the redox reaction, especially the role of surface hydrogen and silicon atoms, is established through the study of the morphology, structure, and electronic and optical properties of Ag on porous silicon. The specimens were characterized with SEM and X-ray absorption fine structure (XAFS) spectroscopy using synchrotron radiation. 157

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“…) , ∼ ϕ c * ∫ works, for example, in [21][22][23]). It should be noted that the B peak is the most intense in the L 2,3 XANES spectrum of NiSi 2 .…”

Section: Resultsmentioning

confidence: 97%

Photoemission electron microscopy of arrays of submicron nickel rods in a silicon dioxide matrix

et al. 2014

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Arrays of Ni rods (~500 nm diameter) formed by the ion track technology in combination with electrochemical deposition into a SiO 2 matrix on the surface of single crystal silicon plates have been inves tigated using photoemission electron microscopy with high intensity synchrotron (undulator) radiation. An analysis of the Ni L 2,3 X ray absorption near edge structure (XANES) spectra has demonstrated that rod like structures in pores and connecting bridges between the rods are formed by a metallic nickel phase, which is stable to oxidation by atmospheric oxygen. No formation of intermediate compound phases (nickel silicides and oxides) is observed at the Ni/SiO 2 heterojunction, whereas oxidized nickel(II) species are identified on the surface of the SiO 2 matrix, which presumably can be attributed to nickel silicate and hydroxide com pounds formed upon nickel(II) chemisorption in electrochemical deposition electrolytes.

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Electronic structure of nickel silicide in subhalf-micron lines and blanket films: An x-ray absorption fine structures study at the Ni and Si L3,2 edge

Cited by 6 publications

References 8 publications

Surface layer determination for the Si spheres of the Avogadro project

Surface layer determination for the Si spheres of the Avogadro project

Semiconductor Growth and Junction Formation within Nano-Porous Oxides

Photoemission electron microscopy of arrays of submicron nickel rods in a silicon dioxide matrix

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