Electronic structure of nickel silicides<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ni</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Si, NiSi, and Ni<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Franciosi, A.; Weaver, J. H.; Schmidt, F. A.

doi:10.1103/physrevb.26.546

Cited by 139 publications

(42 citation statements)

References 32 publications

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“…This effect may indicate that the d-band broadens when going from NiSi 2 over NiSi to Ni 2 Si. Franciosi et al (1982) confirm this trend and also show that the Ni-nearest neighbour distance decreases if the Ni concentration increases, which suggests that the Ni-d character becomes less atomic like with increasing Ni concentration for these three phases.…”

Section: Low Loss Eels Studysupporting

confidence: 70%

“…This is also the case for d-metal compounds and Asayama et al (2007) report a decrease in the branching ratio, from Ni 2 Si over NiSi to NiSi 2 . Franciosi et al (1982) presented synchrotron radiation photoemission studies on Ni-silicides, and showed that the 3d electron occupation of nickel decreases from Ni 2 Si over NiSi to NiSi 2 . Their findings are in agreement with the results from Bisi & Calandra (1982) and Bisi et al (1984), who conducted density of states calculations on these three silicide phases.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of nickel silicides using EELS‐based methods

Verleysen

Bender

Richard

et al. 2010

Journal of Microscopy

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SummaryThe characterization of Ni-silicides using electron energy loss spectroscopy (EELS) based methods is discussed. A series of Ni-silicide phases is examined: Ni 3 Si, Ni 31 Si 12 , Ni 2 Si, NiSi and NiSi 2 . The composition of these phases is determined by quantitative core-loss EELS. A study of the low loss part of the EELS spectrum shows that both the energy and the shape of the plasmon peak are characteristic for each phase. Examination of the Ni-L edge energy loss near edge structure (ELNES) shows that the ratio and the sum of the L 2 and L 3 white line intensities are also characteristic for each phase. The sum of the white line intensities is used to determine the trend in electron occupation of the 3d states of the phases. The dependence of the plasmon energy on the electron occupation of the 3d states is demonstrated.

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Section: Low Loss Eels Studysupporting

confidence: 70%

Section: Introductionmentioning

confidence: 99%

Characterization of nickel silicides using EELS‐based methods

Verleysen

Bender

Richard

et al. 2010

Journal of Microscopy

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“…4,5) Although Ge-Si alloys show no formation of compounds, their electronic properties have been paid attention due to their remarkable potential for application. 6,7) Hence, a large number of studies have been reported for their properties in thin films, in addition, there are several reports for single crystals grown by the Czochralski technique.…”

Section: Introductionmentioning

confidence: 99%

Concentration Dependence of Molar Volume of Binary Si Alloys in Liquid State

Mizuno¹,

Kawauchi²,

Tanno³

et al. 2014

ISIJ Int.

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The molar volumes of binary M-Si (M=Fe, Ni, and Ge) alloys in a liquid state were obtained from their densities measured using electromagnetic levitation coupled with a static magnetic field. We have systematically analyzed the molar volume as a function of composition. Although the concentration dependence of the molar volume of the liquid Ge-Si alloys obeys a linear law which is indicative of an ideal mixture, in comparison, that of the Ni-Si alloys shows a large discrepancy from the linear law as well as the Fe-Si system. The interaction between the constituent atoms was discussed with a view to analyzing the partial molar volume.

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“…The RHEED analysis, carried out exploiting the possibility to vary the angle of incidence of the e-beam on the sample, evidenced a very thin outermost layer of nanocrystalline NiSi 2 on the underlying nanocrystalline Si. Different Ni-silicides with different stoichiometric Ni/Si ratio are known, with spatial density of the Ni atoms changing from about 70% (Ni 2 Si) to about 25% (NiSi 2 ) of the bulk Ni density [20]. Under our experimental conditions, the formation of the silicide with the lowest Ni content among those seems reasonable.…”

Section: Resultsmentioning

confidence: 61%

“…In Figure 3b the corresponding experimental RHEED pattern is reported. Its analysis (Figure 3c-d) revealed the presence of two concomitant sets of Debye's rings, one corresponding to nanocrystalline Si and the other one belonging to nanocrystalline NiSi 2 with a preferential orientation parallel to the substrate and having a cubic structure with a lattice constant spacing a = 0.541 nm [18][19][20]. The RHEED analysis, carried out exploiting the possibility to vary the angle of incidence of the e-beam on the sample, evidenced a very thin outermost layer of nanocrystalline NiSi 2 on the underlying nanocrystalline Si.…”

Section: Resultsmentioning

confidence: 99%