Electronic Structure of Platinum-Group Minerals: Prediction of Semiconductor Band Gaps

Nguyen-Manh, D.; Ntoahae, P. S.; Pettifor, D. G.; Ngoepe, Phuti E.

doi:10.1080/08927029908022083

Cited by 11 publications

(13 citation statements)

References 7 publications

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“…From the Tauc plot, the optical bandgap energy of the PtS film is extracted to be ≈1.24 eV which is consistent with the previously reported values for PtS bulk crystals. [27][28][29] These comprehensive characterization data presented in Figure 1b-e confirm the successful wafer-scale growth of www.advelectronicmat.de ultra-thin non-layered PtS thin film semiconductors. We then studied the structural/chemical structures of 2D PtTe 2 layers whose CVD growth method and characterization were previously discussed in our earlier works.…”

Section: Resultsmentioning

confidence: 58%

Wafer‐Scale Van der Waals Assembly of Free‐Standing Near Atom Thickness Hetero‐Membranes for Flexible Photo‐Detectors

Shawkat

Han

Chung

et al. 2021

Adv Elect Materials

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Heterogeneous integrations of functionally and chemically distinct materials have been explored to develop promising building blocks for opto‐electronic device applications. Recently, the Van der Waals (vdW)‐assembly of near atom thickness materials has provided excellent opportunities beyond what has been previously been difficult to realize. However, its up‐to‐date demonstrations remain far from achieving the scalability and versatility demanded for practical device applications, that is, the integration is generally demonstrated with intrinsically layered 2D materials of very small lateral dimensions. Herein, the large centimeter‐scale vdW assembly of two different materials with structurally, chemically, and functionally distinct properties, that is, 2D platinum ditelluride (PtTe2) metallic multilayers and non‐layered 3D semiconducting platinum sulfide (PtS) are reported. Both materials are precisely delaminated from their growth wafers inside water and are subsequently integrated on unconventional substrates of desired functionalities. The large‐area vdW‐assembled 2D/3D PtTe2/PtS hetero‐materials on flexible substrates exhibit an excellent photodetection in a spectral range of visible‐to‐near infrared (NIR) wavelength, which is well preserved under severe mechanical deformation. This study paves the way for exploring large‐area flexible opto‐electronic devices solely based on near atom thickness materials.

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Section: Resultsmentioning

confidence: 58%

Wafer‐Scale Van der Waals Assembly of Free‐Standing Near Atom Thickness Hetero‐Membranes for Flexible Photo‐Detectors

Shawkat

Han

Chung

et al. 2021

Adv Elect Materials

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“…Herein, we explore a semiconducting platinum sulfide (PtS), conventionally known as a cooperate mineral 3D crystal, converted into a form of a 2D-like freestanding membrane. As a mineral material, bulk 3D PtS crystals have existed in natural or synthetic forms , and have been utilized for various structural − and electrical , applications.…”

Section: Introductionmentioning

confidence: 99%

Peel-and-Stick Integration of Atomically Thin Nonlayered PtS Semiconductors for Multidimensionally Stretchable Electronic Devices

Han

Shawkat

et al. 2022

ACS Appl. Mater. Interfaces

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Various near-atom-thickness two-dimensional (2D) van der Waals (vdW) crystals with unparalleled electromechanical properties have been explored for transformative devices. Currently, the availability of 2D vdW crystals is rather limited in nature as they are only obtained from certain mother crystals with intrinsically possessed layered crystallinity and anisotropic molecular bonding. Recent efforts to transform conventionally non-vdW three-dimensional (3D) crystals into ultrathin 2D-like structures have seen rapid developments to explore device building blocks of unique form factors. Herein, we explore a “peel-and-stick” approach, where a nonlayered 3D platinum sulfide (PtS) crystal, traditionally known as a cooperate mineral material, is transformed into a freestanding 2D-like membrane for electromechanical applications. The ultrathin (∼10 nm) 3D PtS films grown on large-area (>cm2) silicon dioxide/silicon (SiO2/Si) wafers are precisely “peeled” inside water retaining desired geometries via a capillary-force-driven surface wettability control. Subsequently, they are “sticked” on strain-engineered patterned substrates presenting prominent semiconducting properties, i.e., p-type transport with an optical band gap of ∼1.24 eV. A variety of mechanically deformable strain-invariant electronic devices have been demonstrated by this peel-and-stick method, including biaxially stretchable photodetectors and respiratory sensing face masks. This study offers new opportunities of 2D-like nonlayered semiconducting crystals for emerging mechanically reconfigurable and stretchable device technologies.

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“…Platinum sulfide (PtS) is the main component of the rare mineral cooperite, which is also the main source of platinum extraction in the mining industry. Over the past 80 years, research on cooperite, or PtS, has mainly focused on structural mechanics, − magnetic susceptibility, high-pressure-induced phase transitions, electronic properties, − synthesis, , and elasticity . However, to date, its optical properties have been little studied, and there are no reports either on its nonlinear optical (NLO) properties or carrier dynamics.…”

mentioning

confidence: 99%

Surface-State Assisted Carrier Recombination and Optical Nonlinearities in Bulk to 2D Nonlayered PtS

et al. 2019

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Cooperite, or platinum sulfide (PtS), is a rare mineral that generally exists as microscale, irregularly shaped crystallites. The presence of impurities, in both naturally occurring and synthesized samples, has hindered the study of its optical properties in the past. In this work, we prepare large-scale, uniform PtS films in bulk to two-dimensional form through the thermally assisted conversion method. An abnormal trend is observed in linear spectral studies whereby the optical bandgap narrows as the film thickness decreases. A model based on the continuous distribution of carriers in real space, which can be regarded as a quantum well normal to the plane, is used to describe the thickness-dependent carrier recombination phenomenon. In the nonlinear optical measurements, PtS exhibits ultrafast saturable absorption and self-defocusing properties in the visible region, which are dominated by the resonant electronic nonlinearities.

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Electronic Structure of Platinum-Group Minerals: Prediction of Semiconductor Band Gaps

Cited by 11 publications

References 7 publications

Wafer‐Scale Van der Waals Assembly of Free‐Standing Near Atom Thickness Hetero‐Membranes for Flexible Photo‐Detectors

Wafer‐Scale Van der Waals Assembly of Free‐Standing Near Atom Thickness Hetero‐Membranes for Flexible Photo‐Detectors

Peel-and-Stick Integration of Atomically Thin Nonlayered PtS Semiconductors for Multidimensionally Stretchable Electronic Devices

Surface-State Assisted Carrier Recombination and Optical Nonlinearities in Bulk to 2D Nonlayered PtS

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