Electronic structure of Si(110)-(<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>16</mml:mn><mml:mo>×</mml:mo><mml:mn>2</mml:mn></mml:mrow></mml:math>) studied by scanning tunneling spectroscopy and density functional theory

Setvín, Martin; Brázdová, Veronika; Bowler, David R.; Tomatsu, Kota; Nakatsuji, Kan; Komori, Fumio; Miki, Kazushi

doi:10.1103/physrevb.84.115317

Cited by 24 publications

(27 citation statements)

References 35 publications

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“…The broadening corresponds to approximately 0.1 eV at room temperature [35]. LDOS data published by Setvín et al also shows a single peak albeit their peak is located at 0.2 eV [36]. On the other hand, the LDOS graph has a shoulder at 0.3 eV and two well resolved peaks at 0.75 eV and 1.3 eV which are also attributed to pentagons on the surface [28].…”

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confidence: 88%

Iridium–silicide nanowires on Si(110) surface

Mohottige

Oncel

2015

Surface Science

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a b s t r a c tWe studied physical and electronic properties of iridium silicide nanowires grown on the Si(110) surface with the help of scanning tunneling microscopy and spectroscopy. The nanowires grow along the [001] direction with an average length of about 100 nm. They have a band gap of~0.5 eV and their electronic properties show similarities with the iridium silicide ring clusters formed on Ir modified Si(111) surface.© 2015 Elsevier B.V. All rights reserved.Ir (Iridium)-silicides have the lowest (highest) Schottky barrier for holes (electrons) which can be used in various device applications on silicon. For example, among silicides, Pt (Platinum)-silicide/p-doped Silicon (Si) diodes are employed in large focal plane arrays for detection in the medium-wavelength infrared light (3-5 μm) [1]. The Schottky barrier height between Pt-silicide and p-doped Si(001) is about 0.23 eV corresponding to a cutoff wavelength of 5.4 μm [2]. In order to extend the cutoff wavelength, it is necessary to choose interfaces with lower Schottky barrier height. The Schottky barrier height between Irsilicide/p-doped silicon is approximately 0.17 eV corresponding to a cutoff wavelength of 7 μm which makes Ir-silicide a promising material for infrared detector applications [3].As continuous miniaturization challenges lithography techniques in electronics, self-assembly based processes become more attractive. One particularly important self-assembled component is metal-silicide nanowires. These nanowires can function as low-resistance interconnects, as fins in FinFET [4] devices and as nano-electrodes for attaching small electronic components within an integrated circuit. It has already been shown that a variety of metals form self-assembled silicide nanowires on the surface of flat and/or vicinal Si substrates [5][6][7][8][9]. Nanowires can be made up of various elements ranging from Bi [10] and rare-earth metals [11-13] to transition metals [14,15]. In comparison to Si(111) and Si(001) surfaces, Si(110) surface has received relatively less attention because the surface reconstruction is complicated and it is difficult to grow single large domains. However, higher hole mobility in devices fabricated on Si(110) surface and the possibility of employing self-assembled nanowires in various applications have recently increased number of studies on these systems [16][17][18]. Unlike 4-fold symmetric Si(001) surface, Si(110) surface is two-fold symmetric which can lead to formation of nanowires along the same direction. Various studies have already reported the existence of metal-silicide nanowires on Si(110) [6,19,20,[21][22][23]. In this letter, we report the formation of Ir-silicide nanowires.The Si(110) samples used in the Scanning Tunneling Microscopy/ Spectroscopy (STM/STS) experiments were cut from nominally flat 76.2 mm by 0.38 mm, single side-polished n-type (phosphorous doped, R = 1.0-10.0 Ohm-cm) wafers. The samples were mounted on molybdenum holders and contact of the samples to any other metal during preparation and experiment...

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confidence: 88%

Iridium–silicide nanowires on Si(110) surface

Mohottige

Oncel

2015

Surface Science

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“…It is shown that the Si(47 35 7) surface shares the same building block. Our study closes the long-debated pentagon structures on (1 1 0) silicon and germanium surfaces.Over the past three decades, large efforts have been made to understand the atomic and electronic structure of (1 1 0) silicon and germanium surfaces using scanning tunneling microscopy (STM) and spectroscopy, photoelectron spectroscopy and first principles calculations [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. This indicates both the complexity of the task and its high scientific relevance.…”

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confidence: 99%

“…It is also worth noting that, among all low-index silicon and germanium surfaces, (1 0 0), (1 1 1) and (1 1 0) [ Fig. 1(a)], only the (1 1 0) structure is still not understood, and, therefore, it is of signifcant academic interest as well.The common feature of all reconstructed (1 1 0) silicon and germanium surfaces is the presence of bright spots exhibiting pentagonal or tetragonal shapes (hereafter polygons) in high-resolution STM images depending on acquisition conditions [4,11]. When the Ge(1 1 0) surface is observed at an elevated temperature (above 430 • C), the polygons are closely packed and show no long range order [8,14,30].…”

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confidence: 99%

Universal building block for (1 1 0)-family silicon and germanium surfaces

Жачук

Shklyaev

2019

Applied Surface Science

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The universal building block which is an essential part of all atomic structures on (1 1 0) silicon and germanium surfaces and their vicinals is proposed by combining first-principles calculations and scanning tunneling microscopy (STM). The atomic models for the (1 1 0)−(16×2), (1 1 0)−c(8×10), (1 1 0) − (5 × 8) and (17 15 1) − (2 × 1) surface reconstructions are developed on the basis of the building block structure. The models exhibit very low surface energies and excellent agreements with bias-dependent STM images. It is shown that the Si(47 35 7) surface shares the same building block. Our study closes the long-debated pentagon structures on (1 1 0) silicon and germanium surfaces.Over the past three decades, large efforts have been made to understand the atomic and electronic structure of (1 1 0) silicon and germanium surfaces using scanning tunneling microscopy (STM) and spectroscopy, photoelectron spectroscopy and first principles calculations [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. This indicates both the complexity of the task and its high scientific relevance. One of the reasons for the persistent interest to these surfaces is their peculiar properties, such as high hole mobility in the devices fabricated on the Si(1 1 0) surface [21] and strong surface anisotropy. The second feature became especially atrractive due to the recent success in the formation of singledomain (16 × 2) reconstruction on the Si(1 1 0) surface [22,23]. This makes (1 1 0) surfaces very convenient substrates for the growth of one-dimensional objects, such as nanowires [24][25][26][27][28][29]. It is also worth noting that, among all low-index silicon and germanium surfaces, (1 0 0), (1 1 1) and (1 1 0) [ Fig. 1(a)], only the (1 1 0) structure is still not understood, and, therefore, it is of signifcant academic interest as well.The common feature of all reconstructed (1 1 0) silicon and germanium surfaces is the presence of bright spots exhibiting pentagonal or tetragonal shapes (hereafter polygons) in high-resolution STM images depending on acquisition conditions [4,11]. When the Ge(1 1 0) surface is observed at an elevated temperature (above 430 • C), the polygons are closely packed and show no long range order [8,14,30]. However, when the temperature is lowered to about 380 • C the polygons begin to line up and their density is lowered, indicating the formation of the c(8×10) reconstruction. A very long annealing at 380 • C converts the c(8 × 10) reconstruction into the (16 × 2) surface structure. Thus, the (16 × 2) reconstruction is equilibrium, while the c(8 × 10) surface structure is only a transient (metastable) structure of the Ge (1 1 0) surface. The structural transformations on the Si(1 1 0) surface are similar to those of the Ge (1 1 0) surface, but the transient structure is (5 × 8) [16]. The formation of polygons in varied experimental conditions at various temperatures is a strong indication of their exceptional stability owing to low formation energy values. Figure 1. (a) Unit stere...

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“…The electronic state of Ge(110) located at −1.1 V is also clearly present in the troughs between the zigzag pentagon rows and therefore we tentatively ascribe this state to Ge-Ge back bonds. For Si(110)-(16 × 2) two more empty states are reported, 38 one located at 1.2 V and another located at about 1.6 ∼ 2.0 eV above the Fermi level. Since we have not found any empty states up to 1.5 eV for Ge(110) we will not further elaborate on these empty states.…”

Section: Properties Of the Bare Ge(110) Surfacementioning

confidence: 99%

“…Since to the best of our knowledge no spectroscopic data of the Ge(110) is available, we compare our results with spectroscopic data recorded on the closely related Si(110)-(16×2) surface. 38 Setvínet al 38 performed a very detailed study on the electronic structure of the Si(110) surface. In contrast to the Ge(110) surface, Setvín et al found at least four electronic states for the Si(110) surface.…”

Section: Properties Of the Bare Ge(110) Surfacementioning

confidence: 99%

Structural and electronic properties of one- and two- dimensional systems studied by scanning tunneling microscopy

Zhang

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Electronic structure of Si(110)-(16×2) studied by scanning tunneling spectroscopy and density functional theory

Cited by 24 publications

References 35 publications

Iridium–silicide nanowires on Si(110) surface

Iridium–silicide nanowires on Si(110) surface

Universal building block for (1 1 0)-family silicon and germanium surfaces

Structural and electronic properties of one- and two- dimensional systems studied by scanning tunneling microscopy

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