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Pryor, Craig; Pistol, Mats‐Erik; Samuelson, Lars

doi:10.1103/physrevb.56.10404

Cited by 212 publications

(135 citation statements)

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“…The calculations were performed by a method that has been previously described [4]. The strain was calculated using continuum elasticity and the finite element method.…”

Section: Methodsmentioning

confidence: 99%

Band-edge diagrams for strained III–V semiconductor quantum wells, wires, and dots

2005

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We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other. Calculations were done for three different geometries, quantum wells, wires, and dots, and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified novel and interesting material combinations, such as artificial donors, that have not been experimentally realized. The calculations were perfomed using strain-dependent k · p-theory and provide a comprehensive overview of band structures for strained heterostructures.

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“…The calculations were performed by a method that has been previously described [4]. The strain was calculated using continuum elasticity and the finite element method.…”

Section: Methodsmentioning

confidence: 99%

Band-edge diagrams for strained III–V semiconductor quantum wells, wires, and dots

2005

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“…We computed the strain due to lattice mismatch on a cubic grid using continuum elasticity theory. The single-electron energies and wave functions were computed using a realspace eight-band strain-dependent k · p model [20,21] on the same cubic grid and using the strain calculated in the first step. With derivatives of the envelope functions replaced by finite differences on the grid, the Hamiltonian becomes a large sparse matrix that was diagonalized using the Lanzcos algorithm.…”

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confidence: 99%

Strain-inducedg-factor tuning in single InGaAs/GaAs quantum dots

et al. 2016

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“…The wave functions were calculated numerically on a real-space cubic grid using the Lanczos algorithm [13]. This method has been used previously to calculate a variety of electronic properties of strained QDs.…”

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confidence: 99%

Predicted ultrafast single-qubit operations in semiconductor quantum dots

Pryor

Flatté

2006

Applied Physics Letters

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Several recently proposed implementations of scalable quantum computation rely on the ability to manipulate the spin polarization of individual electrons in semiconductors. The most rapid singlespin-manipulation technique to date relies on the generation of an effective magnetic field via a spin-sensitive optical Stark effect. This approach has been used to split spin states in colloidal CdSe quantum dots and to manipulate ensembles of spins in ZnMnSe quantum wells with femtosecond optical pulses. Here we report that the process will produce a coherent rotation of spin in quantum dots containing a single electron. The calculated magnitude of the effective magnetic field depends on the dot bandgap and the strain. We predict that in InAs/InP dots, for reasonable experimental parameters, the magnitude of the rotation is sufficient and the intrinsic error is low enough for them to serve as elements of a quantum dot based quantum computer.PACS numbers: 03.67. Lx, 73.63.Kv Scalable proposals for quantum computation[1] require well-defined individual qubits that can be manipulated individually (single-qubit gates) and also can controllably interact with each other (two-qubit gates) [2]. In solid-state systems often the two-qubit gates appear easier to realize, e.g. by the exchange interaction between electrons[3]. The manipulation of single qubits has been perceived as more difficult; this motivated the proposal of all-exchange-based quantum computation [4], which requires only two-qubit (exchange) gates. All-exchangebased computations require a large number of gate operations, although recent work indicates substantial reductions are possible [5]."Here we predict that a spin-AC Stark effect (1) produces coherent rotations of electron spin in quantum dots, (2) the rotation angle can exceed π for reasonable experimental parameters, and (3) the error rates are tolerable for quantum computation. The spin-splittings of states in CdSe quantum dots [6,7] and coherent manipulation of ensembles of spins in ZnMnSe quantum wells [8] has been demonstrated experimentally. Theoretical considerations of the AC Stark effect [9,10,11] have focused to date only on non-spin-selective shifts of energy levels. Here we consider a spin-selective AC Stark effect whereby a quantum dot is illuminated with a single intense pulse of circularly-polarized nonresonant light (Fig. 1a). Such a pulse shifts the energies of dot states, and due to differing transition matrix elements the two spin states are shifted differently. Hence this pulse produces a splitting of the two lowest energy conduction states. The splitting of these two states (spin-up and spin-down) can be viewed as an optically-induced pseudo-magnetic field ( B ef f ) acting on the state pair. Direct application of this approach to quantum computing is clear, for one well-known physical realization of a single qubit opera- * Electronic address: craig-pryor@uiowa.edu tion is a magnetic field applied to a spin for a definite period of time. We find that the size of the effective field...

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Electronic structure of strainedInP/Ga0.51In

Cited by 212 publications

References 11 publications

Band-edge diagrams for strained III–V semiconductor quantum wells, wires, and dots

Band-edge diagrams for strained III–V semiconductor quantum wells, wires, and dots

Strain-inducedg-factor tuning in single InGaAs/GaAs quantum dots

Predicted ultrafast single-qubit operations in semiconductor quantum dots

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