MgB2 material has a simple composition and structure
that is well-reported and characterized. This material has been widely
studied and applied in the last 20 years as a superconductor in wire
devices and storage material for H in the hydride form. MgB2 doped with transition metals improves the superconductor behavior,
such as the critical temperature (T
cs)
or critical current (J
sc) for the superconducting
state. The results obtained in this manuscript indicate that Nb-,
Fe-, and Ni-doping in the Mg site leads to a contraction of the unit
cell through the spin polarization on the electronic resonance of
the boron layer. Fe and Ni transition metals doping perturb the electronic
resonance because of stronger dopant-boron bonds. The unpaired electrons
are transferred from 3d orbitals to the empty 2p
z
orbitals of the boron atoms, locating α electrons in
the σ bonds and β electrons in the π orbitals. The
observed influence of magnetic dopants on MgB2 enables
the proposal of an electronic mechanism to explain the spin polarization
of boron hexagonal rings.