Electronic structure of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Si</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo><mml:mi>c</mml:mi><mml:mo>(</mml:mo><mml:mn>6</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>2</mml:mn><mml:mo>)</mml:mo></mml:math>-Ag surface studied by angle-resolved photoelectron spectroscopy using synchrotron radiation

Matsuda, Ichiro; Yeom, Han Woong; Tono, Kensuke; Ohta, Toshiaki

doi:10.1103/physrevb.59.15784

Cited by 17 publications

(9 citation statements)

References 22 publications

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“…11, which correspond to the substrate valence band regions to understand effects of the substrate electronic structures. [18,26,27,31] One can find that the observed increase of m * // is found in the bulk valence band region. When a QWS is located inside the energy range, it may interact or hybridize with the substrate electronic states.…”

Section: In-plane Dispersion Of Quantum-well States [29]mentioning

confidence: 81%

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Quantum-Well States in Ultra-Thin Metal Films on Semiconductor Surfaces

Matsuda

Tanikawa

Hasegawa

et al. 2004

e-J. Surf. Sci. Nanotechnol.

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A series of our studies are reviewed on quantized electronic states confined in thin metal films on semiconductor surfaces, investigated by scanning tunneling microscopy and angle-resolved photoemission spectroscopy. Atomically flat and epitaxial Ag(111) films of 5 ∼ 30 atomic layer thick grew on Si(001)2 × 1 and Si(111)7 × 7 clean substrates by depositing Ag at ∼ 100 K and subsequent annealing up to 300∼450 K. Discrete Ag 5s states were observed at binding energies of 0.3∼3 eV below Fermi level, whose energy positions depended on the film thickness, together with the thickness-independent surface state of Ag(111). The discrete electronic states are interpreted in terms of the quantum-well states (QWS) based on the phase-shift quantization rule. The phase shift, energy dispersion, and energy-versus-thickness relation (Structure Plot) of the QWS's were consistently derived. On the other hand, for the in-plane dispersion, in contrast to the expected free-electron-like behavior, the QWS's showed (i) a significant enhancement of the in-plane effective mass with decreasing binding energy, and (ii) a splitting of a QWS into two electronic states having different dispersions at off-Γ points. Such unexpected properties of the QWS were found obviously related to an interaction with the Si substrate band structure. The QWS splitting is explained by the energy dependence in reflection phase shift at the film-substrate interface occurring at the substrate band edge.

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Section: In-plane Dispersion Of Quantum-well States [29]mentioning

confidence: 81%

“…Actually, since the valence band maximum of Si substrate locates at binding energy of ∼ 0.6 eV (Refs. [18,[25][26][27]), the reflection phase shift φ sub at the film/substrate interface changes considerably due to a coupling with the substrate states. This is related to an issue in the next section.…”

Section: Thickness Dependence Of Quantum-well States [15]mentioning

confidence: 99%

Quantum-Well States in Ultra-Thin Metal Films on Semiconductor Surfaces

Matsuda

Tanikawa

Hasegawa

et al. 2004

e-J. Surf. Sci. Nanotechnol.

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“…Surface superstructures formed by adsorptions of alkali metals or noble metals on semiconductor crystals have been intensively studied as prototype systems of metal/ semiconductor interfaces for a long time, because of simple electronic structures of the adsorbates. [1][2][3][4] But they have turned out to be very complicated in the electronic and atomic structures and contain rich physics. The Si͑111͒ ͱ 3 ϫ ͱ 3-Ag surface superstructure, which is formed by one monolayer ͑ML͒ Ag adsorption on a Si͑111͒ surface, is one of the most popular, for which almost all kinds of surface-science techniques have been applied and its atomic and electronic structures are now well understood.…”

Section: Introductionmentioning

confidence: 99%

Evolution of Fermi surface by electron filling into a free-electronlike surface state

et al. 2005

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We have studied the evolutions of surface electronic structure ͑Fermi surfaces and valence bands͒ by electron filling into a two-dimensional free-electronlike surface state, during adsorptions of monovalent metal atoms ͑noble metal; Ag, and alkali metal; Na͒ on the Si͑111͒ ͱ 3 ϫ ͱ 3-Ag surface. The Fermi surfaces ͑Fermi rings͒ of a small electron pocket grow continuously with the adsorption. Eventually, when the ͱ 21ϫ ͱ 21 superstructure was formed by 0.1-0.2 monolayer adsorption of Ag or Na, the Fermi ring is found to be larger than the ͱ 21ϫ ͱ 21-surface Brillouin zone ͑SBZ͒, and to be folded by obeying the ͱ 21ϫ ͱ 21 periodicity. As a result, the Fermi surface is composed of a large hole pocket at the ⌫ point and small electron pockets at the K point in each reduced ͱ 21ϫ ͱ 21 SBZ, meaning that the behavior of surface-state carriers becomes hole-like. Despite a sharp chemical distinction between the adsorbates, a very similar surface electronic structure is found for both the Ag-induced and Na-induced ͱ 21ϫ ͱ 21 phases. Based on the Boltzmann equation, surface-state conductivites of these surfaces are obtained from the measured Fermi surfaces, reproducing successfully the results of previous surface transport measurements.

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“…5,14 The angular and energy resolutions are about 1.5°and 0.1 eV, respectively. 5,14 The angular and energy resolutions are about 1.5°and 0.1 eV, respectively.…”

Section: Methodsmentioning

confidence: 99%

Study of photoelectron spectroscopy from extremely uniform Si nanoislands on Si(111) 7×7 substrate

Negishi

Suzuki

Shigeta

2004

Journal of Applied Physics

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Electronic structures of dangling-bond states on the Si nanoisland and the Si(111) 7 × 7 substrate J. Appl. Phys. 98, 063712 (2005); 10.1063/1.2058176 Interrelations between the local electronic states and the atomic structures in the Si nanoscale island on Si (111)-(7×7) surface J. Appl. Phys. 93, 4824 (2003); 10.1063/1.1561586Scanning tunneling spectroscopy study of silicon and platinum assemblies in an opal matrix

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Electronic structure of theSi(001)c(6×2)-Ag surface studied by angle-resolved photoelectron spectroscopy using synchrotron radiation

Cited by 17 publications

References 22 publications

Quantum-Well States in Ultra-Thin Metal Films on Semiconductor Surfaces

Quantum-Well States in Ultra-Thin Metal Films on Semiconductor Surfaces

Evolution of Fermi surface by electron filling into a free-electronlike surface state

Study of photoelectron spectroscopy from extremely uniform Si nanoislands on Si(111) 7×7 substrate

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