2017
DOI: 10.1063/1.4981522
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Electronic structure of VxTi1−xSe2 in wide concentration region (0.06 ≤ x ≤ 0.9)

Abstract: An experimental study of the electronic structure of VTiSe system in a wide range of vanadium concentrations (x = 0.06-0.9) using x-ray photoelectron spectroscopy and resonant photoelectron spectroscopy has been performed. The partial charge transfer from the VSe to TiSe structural fragments is experimentally observed, and the most part of the charge is localized on the vanadium atoms in the VSe structural fragments.

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Cited by 4 publications
(21 citation statements)
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“…At a high concentration of substitutional V, an energy shift of 0.2 eV of the spectra toward low binding energies is observed, which also coincides with the previous results. 9 At the same time, the spectra for the materials with intercalated V are slightly shifted toward high binding energies.…”
Section: ■ Experimentsmentioning
confidence: 93%
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“…At a high concentration of substitutional V, an energy shift of 0.2 eV of the spectra toward low binding energies is observed, which also coincides with the previous results. 9 At the same time, the spectra for the materials with intercalated V are slightly shifted toward high binding energies.…”
Section: ■ Experimentsmentioning
confidence: 93%
“…Most of the spectra have the same shape and energy position and are in agreement with our previous results. 9 The only spectrum whose shape differs from the others is the one for V 0.08 TiSe 2 . It appears to have a shoulder on the higher-binding-energy side.…”
Section: ■ Experimentsmentioning
confidence: 96%
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