including oxygen vacancies ( V O ), [ 6 ] and zinc vacancies ( V Zn ), [ 7 ] interstitials (Zn i , O i ), [ 8 ] and antisite defects (Zn O , O Zn ) [ 9 ] as well as chemical impurities such as Cu. [ 10 ] The need to characterize point defects in ZnO is further amplifi ed with the recent applications of ZnO nanoparticles as hosts of single emitters for quantum information processing [11][12][13] and their use in random lasing [ 14 ] and other advanced sensing technologies. [ 15 ] These applications require precise control over the defect engineering in ZnO nanoparticles. Consequently, correlative characterization of point defects will be valuable to explore the luminescence properties and affi liate them with their chemical and paramagnetic spin features.In this work we perform comprehensive studies on the formation and photophysical properties of point defects in ZnO nanoparticles. In particular, we employ correlative characterization techniques to assign the optical emission peaks and electron paramagnetic resonance (EPR) lines to specifi c defects in ZnO nanoparticles. Our results provide new insight into optical luminescence properties of ZnO nanoparticles and promote them as potential candidate for nanophotonic technologies. [ 16 ]
Results and DiscussionAfter being annealed in an Ar or Zn vapor environment at 700-900 °C the as-received ZnO nanoparticles (diameter ≈ 20 nm) coalescence [ 17,18 ] and display faceted morphologies ( Figure 1 ). The nanoparticles increase in average size up to about 120 nm after annealing in inert gas (Ar) or oxygen, and up to 150 nm for annealing in Zn vapor at 900 °C [see Figures S1 and S2, Supporting Information for nanoparticle sizes obtained from scanning electron microscopy (SEM) image and X-ray diffraction (XRD) analysis]. Since the Bohr radius of ZnO is 2.34 nm, [ 19 ] the nanoparticles are large enough to avoid quantum size effects but still possess a suffi ciently large surface area to allow defect engineering.To investigate the occurrence of defects in ZnO nanoparticles, EPR spectroscopy was performed. Figure 2 a shows EPR spectra of the as-received, O 2 annealed, Zn vapor annealed ZnO nanoparticles and a bare Si(100) substrate for comparison. The as-received ZnO nanoparticles exhibit a strong signal at g = 1.96, which has been previously assigned to zinc vacancies (V Zn − ), [ 20 ] oxygen interstitials (O i − ), [ 20 ] zinc interstitials (Zn i + ) [ 21 ] and to electrons in weakly bound or conduction band (CB) Zinc oxide (ZnO) nanoparticles have recently been identifi ed as a promising candidate for advanced nanophotonics applications and quantum technologies. This work reports the formation of luminescent point defects and describes their photophysical properties. In particular, it is shown using correlative photoluminescence, cathodoluminescence, electron paramagnetic resonance (EPR), and X-ray absorption near-edge spectroscopy that green luminescence at 2.48 eV and an EPR line at g = 2.00 belong to a surface oxygen vacancy (V o,s + ) center, while a second green emi...