2022
DOI: 10.1016/j.mtcomm.2022.103908
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Electronic structures and thermoelectric properties of heavily doped n-type ZrCoBi from first principles calculations

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Cited by 4 publications
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“…Ni . Bi at 900 K [36]. Zhu et al announced the discovery the Half-Heusler of ZrCoBi with a huge TE conversion efficiency of ∼ 9%, which is computed at a wide temperature variation of about 500 K, and reached a good ZT amount of about 1.42 at 973 K [37].…”
Section: Introductionmentioning
confidence: 99%
“…Ni . Bi at 900 K [36]. Zhu et al announced the discovery the Half-Heusler of ZrCoBi with a huge TE conversion efficiency of ∼ 9%, which is computed at a wide temperature variation of about 500 K, and reached a good ZT amount of about 1.42 at 973 K [37].…”
Section: Introductionmentioning
confidence: 99%