Abstract:Electronic structure calculations have been carried out for various model Al ,J clusters with X an atom of an element known, or likely, to give rise to changes in the corrosion resistance of AIX alloys. The calculations involved the use of a novel orthogonal outer-sphere MSXa technique and results for the partial densities of states for the clusters Al , , , Al ,,l n, AI , , Zn, AI , , Cr, AI , , Ti , and A14,Ta are consistent with the hypothesis that activation of aluminum is to be expected for dopant atoms w… Show more
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