Electronic structures of CuI interlayers in organic electronic devices: An interfacial studies of N,N′ -diphenyl- N,N′ -bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine/CuI and tris-(8-hydroxyquinolinato)aluminum/CuI

Enhanced hole injection in organic light-emitting diodes utilizing a copper iodide-doped hole injection layer

“…This behavior demonstrates that doping CuI in m-MTDATA layer enhances the charge injection and transport due to the increase in free holes concentration in the doped layer, which is caused by the electron charge transfer from m-MTDATA to CuI molecules. Yi et al also recently reported that CuI interlayer dramatically reduced the HIB height from ITO to organic layer owing to the electron-withdrawing property of CuI and relatively small interface dipole, 26 which may be responsible for the enhancement of the hole injection simultaneously in our work.…”

“…In general, p-type dopants forms charge-transfer (CT) complex with hole transporting organic materials by charges transfer from the highest occupied molecular orbital (HOMO) of host materials to the lowest occupied molecular orbital (LUMO) of dopant molecules. 25 If we consider that m-MTDATA possesses HOMO level of 5.1 eV and CuI has a high work function of about 5.5 eV, 26 CT complex can easily form as detected by the presence of additional absorption peaks in absorbance spectrum. 27 Fig.…”

Mixing of Phosphorescent and Exciplex Emission in Efficient Organic Electroluminescent Devices

“…The device was fabricated by step-by-step deposition of various functional layers. CuI , was used for the hole-transporting layer, and 3,6-di­(9-carbazolyl)-9-(2-ethylhexyl)­carbazole ( TCz1 ) was used for the electron-transporting layer. ,, TCz1 is characterized by good electron-injection properties, ,, and it was used as a host material for the FIrpic phosphor . The Ca layer topped with aluminum (Al) layer was used as the cathode.…”

Unveiling the Electronic Structure of ZnO–C60 Core–Shell Quantum Dots: The Origin of Efficient Electron Transport

“…The VBM of ZnO QDs was located 3.40 eV below the E F , and it did not shift during the interface formation. The conduction band minimum (CBM) of ZnO QDs was estimated to be 0.10 eV above the E F based on its band gap of 3.50 eV. , The flat band on the ZnO QD side means that the charge density of ZnO QDs was much higher than that of C 60 ; thus, no noticeable energy level shift was observed with electron transfer due to its extremely short screening length . The low volume ratio of C 60 /ZnO is an additional reason for the flat band.…”

“…25,26 The flat band on the ZnO QD side means that the charge density of ZnO QDs was much higher than that of C 60 ; thus, no noticeable energy level shift was observed with electron transfer due to its extremely short screening length. 45 The low volume ratio of C 60 /ZnO is an additional reason for the flat band. Collectively, the energy level alignment related to electron transport between ZnO QDs and C 60 is as follows.…”