Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

Liao, Gaohua; Luo, Ning; Chen, Ke‐Qiu; Xu, Hongqi

doi:10.1038/srep28240

Cited by 16 publications

(6 citation statements)

References 48 publications

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“…On the theoretical side, even when there exist a number of advanced approaches to investigate the electron-electron (e-e) interaction in nanostructures, usually such formalisms are limited to one or few charge carriers and to the nanometric scale [22,23,24,25,26]. Modeling of micron-long semiconductor NWs and the e-e interaction for electronic densities (n) obtained from usual doping levels (10 16 -10 19 electrons/cm 3 ) is a very cumbersome task, impracticable to carry out in a direct way.…”

Section: Introductionmentioning

confidence: 99%

Tunneling between parallel one-dimensional Wigner crystals

Méndez-Camacho

Cruz‐Hernández

2021

Preprint

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Vertically aligned arrays are a frequent outcome in the nanowires synthesis by self-assembly techniques or in its subsequent processing. When these nanowires are close enough, quantum electron tunneling is expected between them. Then, because extended or localized electronic states can be established in the wires by tuning its electron density, the tunneling configuration between adjacent wires could be conveniently adjusted by an external gate. In this contribution, by considering the collective nature of electrons using a Yukawa-like effective potential, we explore the electron interaction between closely spaced, parallel nanowires while varying the electron density and geometrical parameters. We find that, at a low-density Wigner crystal regime, the tunneling can take place between adjacent localized states along and transversal to the wires axis, which in turn allows to create two- and three-dimensional electronic distributions with valuable potential applications.

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Section: Introductionmentioning

confidence: 99%

Tunneling between parallel one-dimensional Wigner crystals

Méndez-Camacho

Cruz‐Hernández

2021

Preprint

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“…hexagonal cross-section. [57] The probability distributions of HH and LH states shown in Fig. 3 are either s-like or ring-like (arising from a quadrupolar symmetry of the real/imaginary parts of the envelope functions), similarly to corresponding conduction states, although of course the ordering is different, as HH-and LH-like states interlace, while no orbital degeneracies is expected, since the strongly anisotropic bulk valence band structure does not share the hexagonal symmetry of the confinement.…”

Section: Resultsmentioning

confidence: 97%

Band structure of n- and p-doped core-shell nanowires

Vezzosi,

Bertoni,

Goldoni

2022

Preprint

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We investigate the electronic band structure of modulation-doped GaAs/AlGaAs core-shell nanowires for both n-and p-doping. We developed an 8-band Burt-Foreman k • p Hamiltonian approach to describe coupled conduction and valence bands in heterostructured nanowires of arbitrary composition, growth directions, and doping. Coulomb interactions with the electron/hole gas are taken into account within a mean-field self-consistent approach. We map the ensuing multiband envelope function and Poisson equations to optimized, non-uniform real-space grids by the finite element method. Self-consistent charge density, single-particle subbands, density of states and absorption spectra are obtained at different doping regimes. For n-doped samples, the large restructuring of the electron gas for increasing doping results in the formation of quasi-1D electron channels at the core/shell interface. Strong heavy-hole/light-hole coupling of hole state leads to non parabolic dispersions with mass inversion, similarly to planar structures, which persist at large dopings, giving rise to direct LH and indirect HH gaps. In p-doped samples the hole gas forms an almost isotropic, ring-like cloud for a large range of doping. Here, as a result of the increasing localization, HH and LH states uncouple, and mass inversion takes place at a threshold density. Similar evolution is obtained at fixed doping as a function of temperature. We show that signatures of the evolution of band structure can be singled out in the anisotropy of linearly polarized optical absorption.

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“…Various methods, including density-functional-theory (DFT)2829303132, tight-binding (TB) theory252633343536373839404142, and the theory244344454647484950515253, have been used to calculate the band structure of nanowires. Among them, DFT is the first-principle method which is free from any adjustable parameters, and is therefore often the choice for electronic structure calculations.…”

Section: Methodsmentioning

confidence: 99%

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires

Luo

Huang

Liao

et al. 2016

Sci Rep

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The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the 8 × 8 Luttinger-Kohn Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands. We focus on the variations of the band-inverted fundamental gap, the hybridization gap, and the effective gap with the core radius and shell thickness of the nanowires. The evolutions of all the energy gaps with the structural parameters are shown to be dominantly governed by the effect of quantum confinement. With a fixed core radius, a band-inverted fundamental gap exists only at intermediate shell thicknesses. The maximum band-inverted gap found is ~4.4 meV for GaSb/InAs and ~3.5 meV for InAs/GaSb core-shell nanowires, and for the GaSb/InAs core-shell nanowires the gap persists over a wider range of geometrical parameters. The intrinsic reason for these differences between the two types of nanowires is that in the shell the electron-like states of InAs is more delocalized than the hole-like state of GaSb, while in the core the hole-like state of GaSb is more delocalized than the electron-like state of InAs, and both favor a stronger electron-hole hybridization.

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Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

Cited by 16 publications

References 48 publications

Tunneling between parallel one-dimensional Wigner crystals

Tunneling between parallel one-dimensional Wigner crystals

Band structure of n- and p-doped core-shell nanowires

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires

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