Electronic thermal conductivity measurements in intrinsic graphene

Yigen, Serap; Tayari, V.; Island, Joshua O.; Porter, James M.; Champagne, A. R.

doi:10.1103/physrevb.87.241411

Cited by 66 publications

(64 citation statements)

References 36 publications

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“…Moreover, the electronic thermal conductivity is important for metals. For graphene, phonons are the primary contributors to the thermal conductivity, and electronic thermal conductivity is less than 1% of the overall thermal conductivity [110,111]. Thus, only the phonon (lattice) thermal conductivity will be discussed for the graphene.…”

Section: Thermal Conductivitymentioning

confidence: 99%

Graphene versus MoS2: A short review

Jiang

2015

Front. Phys.

183

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Graphene and MoS 2 are two well-known quasi two-dimensional materials. This review presents a comparative survey of the complementary lattice dynamical and mechanical properties of graphene and MoS 2 , which facilitates the study of graphene/MoS 2 heterostructures. These hybrid heterostructures are expected to mitigate the negative properties of each individual constituent and have attracted intense academic and industrial research interest.

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Section: Thermal Conductivitymentioning

confidence: 99%

Graphene versus MoS2: A short review

Jiang

2015

Front. Phys.

183

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“…We study a temperature range of T = 50 -160 K, where the electron and lattice temperatures are very well decoupled in low-disorder graphene [1][2][3][4][5][6] , over a charge density range of ≈ 0.5 to 1.8 ×10 11 cm −2 . We extract data in the hole and electron doped regimes from two high-mobility suspended devices.…”

mentioning

confidence: 99%

“…For reference only, we also show two data points (open grey symbols) close to V G ≈ 0 which are taken from Ref. 6 for the same Samples. We cannot extract K e at intermediate n, i.e.…”

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confidence: 99%

Wiedemann–Franz Relation and Thermal-Transistor Effect in Suspended Graphene

Yigen

Champagne

2013

Nano Lett.

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We extract experimentally the electronic thermal conductivity, K e , in suspended graphene which we dope using a back-gate electrode. We make use of two-point dc electron transport at low bias voltages and intermediate temperatures (50 -160 K), where the electron and lattice temperatures are decoupled. The thermal conductivity is proportional to the charge conductivity times the temperature, confirming that the Wiedemann-Franz relation is obeyed in suspended graphene. We extract an estimate of the Lorenz coefficient as 1.1 to 1.7 ×10 −8 W ΩK −2 . K e shows a transistor effect and can be tuned with the back-gate by more than a factor of 2 as the charge carrier density ranges from ≈ 0.5 to 1.8 ×10 11 cm −2 .Keywords: Graphene, Thermal conductivity, Wiedemann-Franz, Thermal transistor, electron-phonon Graphene's electronic thermal conductivity, K e , describes how easily Dirac charge carriers (electron and hole quasiparticles) can carry energy. In low-disorder graphene at moderate temperatures (< 200 -300 K), the energy transfer rate between charge carriers and acoustic phonons is extremely slow 1-6 . Thus, K e impacts how a hot electron cools down, and the efficiency of charge harvesting in graphene optoelectronic devices 1,2,7 . Moreover, understanding and controlling K e could help develop graphene bolometers capable of detecting single terahertz photons 4,8 . There are theoretical calculations of K e 9-11 , and recent experimental data near the charge neutrality point (CNP) in clean suspended graphene 6 and in disordered samples at very low temperatures 4,8 . However, a detailed mapping of K e vs charge density at intermediate temperatures is lacking. Understanding how K e in clean (suspended) graphene depends on charge density, n, and the electronic temperature, T e , is crucial for applications. An important fundamental question is whether the Wiedemann-Franz (WF) law, K e = σLT e where σ is the charge conductivity, and L is the Lorenz number, is obeyed in graphene. In clean graphene at low charge densities (hydrodynamic regime), strong electronelectron interactions could lead to departures from the generalized WF law 10,11 .We report K e in monolayer graphene extracted from carefully calibrated dc electron transport measurements following a method we previously discussed 6 . We study a temperature range of T = 50 -160 K, where the electron and lattice temperatures are very well decoupled in low-disorder graphene 1-6 , over a charge density range of ≈ 0.5 to 1.8 ×10 11 cm −2 . We extract data in the hole and electron doped regimes from two high-mobility suspended devices. The extracted K e are compared with predictions from the WF law. The agreement between the WF relation and measurements is very good for both devices over the n range studied and T up to 160 K. The value of L is ≈ 0.5 -0.7 L o , where L o is the Lorenz factor a) Electronic mail: a.champagne@concordia.ca for metals. We observe a sudden jump in the extracted thermal conductivity above 160 K which is consistent with the onset of strong coupling...

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“…The photoconductive gain of FEpTs based on graphene-QD hybrids has reached up to 10 8 and was several orders of magnitude larger that of any graphene FETs or QD FETs reported before [2][3][4][5]. The excellent performance of extra high mobility and responsivity of FEpTs based on graphene-quantum dots is mainly attributed to the large absorbance of PbSe QDs and the fast transport in graphene [6].…”

Section: Introductionmentioning

confidence: 86%

“…The slope of ‫ܫ∂‬ ߲ܸ ீ ⁄ can be obtained by linearly fitting the transfer characteristics at low ܸ ௌ and the mobility can be calculated according to equation (2). For W=2.5mm, L=0.1mm, ܸ ௌ =0.5V, C ox~1 00pFcm -2 , the hole mobility and electron mobility were calculated to be 1228.0 cm 2 V -1 s -1 and 1621.0 cm 2 V -1 s -1 .…”

Section: Electrical Properties Of the Feptsmentioning

confidence: 99%

Field-Effect Phototransistors Based on Graphene-Quantum Dot Hybrids

Zhang

2016

MATEC Web of Conferences

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Abstract. Field effect photo-transistors (FEpTs) based on graphene-PbSe quantum dot (QD) hybrids have been designed and fabricated. By electrical and photoelectrical measurements, the carrier mobilities reached to 1621 cm 2 V -1 s -1 for electrons and 1228 cm 2 V -1 s -1 for holes, the photoresponsivity (R) achieved to 1 AW -1 , and the photoresponse time (߬ 1 ) was 0.7 s when the photocurrent came to about 80%. Therefore, the FEpTs based on graphene-QD hybrids have shown broad application prospects.

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Electronic thermal conductivity measurements in intrinsic graphene

Cited by 66 publications

References 36 publications

Graphene versus MoS2: A short review

Graphene versus MoS2: A short review

Wiedemann–Franz Relation and Thermal-Transistor Effect in Suspended Graphene

Field-Effect Phototransistors Based on Graphene-Quantum Dot Hybrids

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