The ionization dynamics of CF4, which plays an
important role in the initial processes of plasma dry etching
on a silicon surface, has been investigated by means of both static ab initio molecular orbital (MO) and full dimensional direct ab initio dynamics calculations.
The static ab initio MO calculation
(MP4SDQ/6-311G(d, p) level) showed that the
CF4+ ion has a structure that is strongly distorted from
Td symmetry and which is expressed by
CF3+-F.
The complex is 5.8 kcal mol-1 more stable in energy than its
dissociation
limit (CF3+ + F).
From the dynamics calculations
(HF/6-311G(d, p) level), it was found that CF4+,
formed by the vertical ionization of CF4, decomposes directly
into CF3+
and F via the complex region corresponding to
CF3+-F. The lifetime of the
CF3+-F complex is extremely short and may be
neglected. The analysis of the
product states showed that 65% of the total available energy is
partitioned into the relative translational mode between
CF3+ and F. The
C-F stretching mode of CF3+
is still in the ground state after the dissociation, whereas
the CF3 umbrella mode is excited to v = 1-2.
The mechanism of the ionization of CF4
is discussed on the basis of the calculations in this paper.