Electronic transition, ferroelectric and thermoelectric properties of bismuth pyrostannate Bi2(Sn0.85Cr0.15)2O7

Dynamic characteristics of electric charge in HoxMn1–xS

“…Perhaps this is due to the delocalization of electrons located in the vicinity of holmium ions. A similar effect was observed in the stanats with nonstoichiometric substitution of tin with 3d-elements [25][26][27]. In a solid solution of Ho0.1Mn0.9S the dependence of charge on time when switching voltage is shown in figure 4.…”

Magnetoresistive effect in YbxMn1-xSat small concentrations

“…In Yb x Mn 1-x S c x = 0.1, the activation energy of current carriers in the magnetic field decreases and the magnetoresistive coefficient changes sign from negative to positive at T = 260 K (figure 2b). The maximum value (ρ(Н)ρ(0)) / ρ(0) is observed at T = 360 K and the magnetoresistive effect disappears asymptotically at T = 500 K. The formation of an orbital ordering [26,27] of the glass state type [28,29] can lead to a change in elastic characteristics, both static and dynamic, for example, a change in the impedance in a magnetic field [30]. Below the coefficient of thermal expansion of the lattice as a function of temperature is studded.…”

Electrical properties and Raman spectra in HoxMn1-xS solid solution

“…In our model for the concentration x = 0.01 there are localized electronic states that can lead to the Raman shift in the frequency in the spectrum of electronic excitations. At the heating the width of lines in the Raman spectra grows and lines at the frequency of ω3 disappear in the range of temperatures (400-460) K as a result interaction of electrons with the phonons [23]. decreases and a new peak is observed in the spectra of Raman light scattering at frequencies ω1 = 370 cm -1 and ω2 = 632 cm -1 for x = 0.3, ω2 = 648 cm -1 for x = 0.01.…”