Electronic transition from graphite to graphene via controlled movement of the top layer with scanning tunneling microscopy

Xu, Peng; Yang, Yurong; Qi, D.; Barber, S.D.; Schoelz, J.K.; Ackerman, M.L.; Bellaïche, L.; Thibado, P. M.

doi:10.1103/physrevb.86.085428

Cited by 27 publications

(28 citation statements)

References 40 publications

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“…Our experiments did not show a specific trend in the moving probability as a function of the tip voltage (while keeping the tip-sample distance constant). This observation rules out electrostatic effects as the triggering factor of the sliding motion, as was reported in electrostatic manipulation STM (EM-STM) experiments [36,37]. This is further confirmed by the observation of non-directional WS 2 sliding triggered by an AFM probe.…”

Section: Ws 2 Sliding Triggered By a Scanning Probe Microscopy (Spm) Tipsupporting

confidence: 84%

Superlubricity of epitaxial monolayer WS2 on graphene

et al. 2018

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We report the superlubric sliding of monolayer tungsten disulfide (WS 2) on epitaxial graphene (EG) grown on silicon carbide (SiC). Single-crystalline WS 2 flakes with lateral size of hundreds of nanometers are obtained via chemical vapor deposition (CVD) on EG. Microscopic and diffraction analyses indicate that the WS 2 /EG stack is predominantly aligned with zero azimuthal rotation. The present experiments show that, when perturbed by a scanning probe microscopy (SPM) tip, the WS 2 flakes are prone to slide over the graphene surfaces at room temperature. Atomistic force field-based molecular dynamics simulations indicate that, through local physical deformation of the WS 2 flake, the scanning tip releases enough energy to the flake to overcome the motion activation barrier and trigger an ultralow-friction rototranslational displacement, that is superlubric. Experimental observations show that, after sliding, the WS 2 flakes come to rest with a rotation of n/3 with respect to graphene. Moreover, atomically resolved measurements show that the interface is atomically sharp and the WS 2 lattice is strain-free. These results help to shed light on nanotribological phenomena in van der Waals (vdW) heterostacks, and suggest that the applicative potential of the WS 2 /graphene heterostructure can be extended by novel mechanical prospects.

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Section: Ws 2 Sliding Triggered By a Scanning Probe Microscopy (Spm) Tipsupporting

confidence: 84%

Superlubricity of epitaxial monolayer WS2 on graphene

et al. 2018

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“…Since carbon atoms in an AA stack have higher energy as compared to the one for the AB stack we expect larger amplitude in AA stacked region [41]…”

Section: Resultsmentioning

confidence: 98%

Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC

Schoelz

et al. 2014

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Epitaxial graphene is grown on a non-polar n + 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below.Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moiré pattern wavelength, L as 

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“…This lateral displacement is expected due to the weak van der Waals force between the two graphene layers 25 26 . There is extensive evidence in the literature that lateral displacement of graphene layers with respect to each other takes place in various types of scanning probe microscopies 27 28 29 30 31 32 33 34 35 36 . The relative displacement of a single graphene layer on another graphene layer is even more likely when accompanied by deformation of the layers 37 .…”

Section: Resultsmentioning

confidence: 99%

Electromechanical oscillations in bilayer graphene

et al. 2015

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Nanoelectromechanical systems constitute a class of devices lying at the interface between fundamental research and technological applications. Realizing nanoelectromechanical devices based on novel materials such as graphene allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron–phonon interaction and bandgap engineering. In this work, we realize electromechanical devices using single and bilayer graphene and probe the interplay between their mechanical and electrical properties. We show that the deflection of monolayer graphene nanoribbons results in a linear increase in their electrical resistance. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. The proposed theoretical model suggests that these oscillations arise from quantum mechanical interference in the transition region induced by sliding of individual graphene layers with respect to each other. Our work shows that bilayer graphene conceals unexpectedly rich and novel physics with promising potential in applications based on nanoelectromechanical systems.

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Electronic transition from graphite to graphene via controlled movement of the top layer with scanning tunneling microscopy

Cited by 27 publications

References 40 publications

Superlubricity of epitaxial monolayer WS2 on graphene

Superlubricity of epitaxial monolayer WS2 on graphene

Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC

Electromechanical oscillations in bilayer graphene

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