Electronic transitions in bulkAl0.3Ga0.7As under hydrostatic pr

Confined electronic structure in GaAs quantum dots

“…The bulk GaAs pressure coefficient is in good agreement with the reported value of 10:6 meV [7]. After the band crossover, the pressure coefficient of the AlGaAs X conduction band is found to be À1:6 meV=kbar; which is also in good agreement with the reported value of À1:7 meV=kbar [3]. Fig.…”

“…The AlGaAs emission becomes too weak to detect after 7:8 kbar; reflecting a change to an indirect recombination emission. This pressure is regarded as the band crossover pressure for AlGaAs and the pressure coefficient is 12:2 meV=kbar: This value is comparable to the reported pressure coefficient for Al 0:3 Ga 0:7 As; which is 9:5 meV=kbar [3]. The energies of the bulk GaAs and GaAs QD peaks deviate from a linear pressure dependence near the band crossover.…”

Energy-Band Structure: Energy-Band Gaps of Bulk Materials

“…x As has been reported by Reimann et al 113 and Roach et al 114 These data suggest that the linear pressure coefficient dE g x /dp is ~-1.5xl0" 2 eV/GPa, independent of the alloy composition x. Sugeta et al 62 have also analyzed the high-field transport characteristics of Al.Ga^As under hydrostatic pressure and found that the L-minima pressure coefficient of dE g L /dp=5.5xl0 2 eV/GPa explains well both the transport results for GaAs and for Al^Ga^As.…”

“…Figure 7.21 plots the linear pressure coefficient of the E 0 gap as a function of composition x for Al x Ga,.,,As alloy. 104,114 Lifshitz et al 104 have found that the experimental pressure coefficient dE"/dp for Al^Ga^As increases linearly up to x=0. 25 and then decreases nonlinearly.…”

“…x As have been experimentally studied by several authors. 62,104113,114 We summarize in Table 7.14 the results of these experiments. Figure 7.21 plots the linear pressure coefficient of the E 0 gap as a function of composition x for Al x Ga,.,,As alloy.…”