2001
DOI: 10.1021/cm000703f
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Electronic Transitions in Doped and Undoped Copper Germanate

Abstract: We report an analysis of the absorption edge anisotropy in CuGeO3 based on a comparison of polarized optical data with electronic structure calculations in the framework of the extended Hückel tight binding model. Taking the z axis as parallel to the CuO4 chains, we ascribe the absorption edge in the magnetic chain direction to O 2p x , 2p y → singly filled Cu 3d transitions and the edge in the transverse direction to O 2p z → singly filled Cu 3d excitations. The dual slope in the transverse direction is a d… Show more

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Cited by 5 publications
(4 citation statements)
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“…At low temperature, the gap sharpens and moves to higher energy. The shape of the optical gap is similar to that of other synthetic metal materials.
1 300 K absorption spectrum of C 8 -VONT. The inset shows a close-up view of one of the high-energy excitations, which changes modestly with sheet distance.
…”
Section: Resultssupporting
confidence: 63%
“…At low temperature, the gap sharpens and moves to higher energy. The shape of the optical gap is similar to that of other synthetic metal materials.
1 300 K absorption spectrum of C 8 -VONT. The inset shows a close-up view of one of the high-energy excitations, which changes modestly with sheet distance.
…”
Section: Resultssupporting
confidence: 63%
“…Electronic structure calculations were carried out using the extended Hückel tight-binding method. This method has been shown to be successful in the past for understanding the behavior of other transition metal oxides. …”
Section: Methodsmentioning
confidence: 99%
“…It is slightly lower for the dehydrated compounds, giving 3.52 and 3.47 eV, respectively (Table 1). For comparison, Rudko [24] observed an absorption edge near 3.5 eV for the charge transfer CuO (tenorite) [25] and CuGeO 3 , respectively [26].…”
Section: Resultsmentioning
confidence: 99%
“…It is slightly lower for the dehydrated compounds, giving 3.52 and 3.47 eV, respectively (Table 1). For comparison, Rudko [24] observed an absorption edge near 3.5 eV for the charge transfer insulator CuGeO 3 . The absorption structures at high energy just before the energy gap may be attributed to simultaneous ligand field transitions involving both metal centres of the dimer at twice the monomer transition energy (SPE), because their oscillator strengths are too weak for charge transfer (CT) transitions.…”
Section: Resultsmentioning
confidence: 99%