Electronic transport in Ta2O5 resistive switch

Abstract

Articles you may be interested inA theory of single-electron non-adiabatic tunneling through a small metal nanoparticle with due account of the strong interaction of valence electrons with phonons of the condensed matter environment

Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy

“…The output voltage to the substrate was swept from 0 to 7 V, from 7 to À2 V, and back to 0 V. The I-V curve indicates hysteresis characteristics, which were similar to those found in other studies on solid electrolyte ReRAMs. [10][11][12][13][14][15][16][19][20][21][22][23][24][25] A set of TEM images corresponding to those in Fig. 4 have been presented in Fig.…”

“…22 Therefore, the analysis of conductive filaments should provide important information that enables this switching mechanism to be understood. Conductive filaments not only in cation-type but also in anion-type electrolytes have recently been observed.…”

Observation of conducting filament growth in nanoscale resistive memories

“…Recently, they have also been linked to the concept of memristors [9][10][11] for analogue circuit 12 and neuromorphic computing [13][14][15] applications. For many devices, the resistive switching effect is believed to be caused by the formation of conducting filaments [16][17][18][19][20][21] . Understanding the dynamics of filament growth is thus of critical importance to continued device research.…”

Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch

“…This situation is quite similar to that observed for a gap-type atomic switch, in which a metal bridge is formed between the tip of a scanning tunneling microscope (STM) and a sample. 4,21 Atomistic nucleation theory predicts that the nucleation time depends exponentially on the applied voltage: 22 where the pre-exponential term t 0 (Z 0 , N ion ) depends on the number density Z 0 of the nucleation sites and on the number (concentration) N ion of ions, N c is the number of atoms constituting the critical nucleus, α the cathodic transfer coefficient, e the electron charge, φ the applied cathodic potential (takes negative values), k the Boltzmann constant, and T the absolute temperature. 2,23 The solid line in Fig.…”

“…Of the various types of RRAM available, the cells whose resistive switching is based on the migration of cations in a thin metal oxide layer are very attractive for practical applications, because metal oxides are highly compatible with current complementary metal-oxidesemiconductor processes. 4 In these devices, an electrochemically active metal (usually Ag or Cu) is used as one electrode. The mechanism of their operation is essentially identical to that of an "atomic switch", whose resistance across a nanometer gap is controlled by the formation and annihilation of a metal bridge under an electrical bias; 5 we call this MIM-structured cell a "gapless-type atomic switch".…”