Electronic transport mechanism in intrinsic and doped nanocrystalline silicon films deposited by RF-magnetron sputtering at low temperature

Benlakehal, D.; Belfedal, A.; Bouizem, Y.; Sib, J.D.; Chahed, L.; Zellama, K.

doi:10.1016/j.spmi.2016.09.035

Cited by 5 publications

(1 citation statement)

References 30 publications

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“…The unusual phenomenon where n h and µ h both increase simultaneously can be attributed to the fact that, in polycrystalline samples with high concentration of impurities, the mobility of carrier follows either the percolation model or the variable range hopping model. [ 48 , 49 , 50 ] Furthermore, doping of S atoms is more spontaneous to passivate I − vacancies rather than exchanging I − with S 2− . Nevertheless, doping concentration exceeding 1.5% exhibited µ h decrease to 8.22 cm 2 V −1 s −1 owing to the increase in residual C. Finally, to optimize the annealing temperature, 1.5% NET doped CuI:S thin‐films were annealed at different temperatures (25–200 °C), as shown in Figure 4d .…”

Section: Resultsmentioning

confidence: 99%

Dopant Control of Solution‐Processed CuI:S for Highly Conductive p‐Type Transparent Electrode

Son,

Kim,

Song

et al. 2024

Advanced Science

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Copper iodide (CuI) has garnered considerable attention as a promising alternative to p‐type transparent conducting oxides owing to its low cation vacancy formation energy, shallow acceptor level, and readily modifiable conductivity via doping. Although sulfur (S) doping through liquid iodination has exhibited high efficacy in enhancing the conductivity with record high figure of merit (FOM) of 630 00 MΩ−1, solution‐processed S‐doped CuI (CuI:S) for low‐cost large area fabrication has yet to be explored. Here, a highly conducting CuI:S thin‐film for p‐type transparent conducting electrode (TCE) is reported using low temperature solution‐processing with thiourea derivatives. The optimization of thiourea dopant is determined through a comprehensive acid‐base study, considering the effects of steric hindrance. The modification of active groups of thioureas facilitated a varying carrier concentration range of 9 × 1018–2.52 × 1020 cm−3 and conductivities of 4.4–390.7 S cm−1. Consequently, N‐ethylthiourea‐doped CuI:S exhibited a FOM value of 7 600 MΩ−1, which is the highest value among solution‐processed p‐type TCEs to date. Moreover, the formulation of CuI:S solution for highly conductive p‐type TCEs can be extended to CuI:S inks, facilitating high‐throughput solution‐processes such as inkjet printing and spray coating.

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Section: Resultsmentioning

confidence: 99%

Dopant Control of Solution‐Processed CuI:S for Highly Conductive p‐Type Transparent Electrode

Son,

Kim,

Song

et al. 2024

Advanced Science

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Exploring Doping Mechanisms and Modulating Carrier Concentration in Copper Iodide: Applications in Thermoelectric Materials

Kim,

Lee

et al. 2024

Small

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Due to its small hole‐effective mass, flexibility, and transparency, copper iodide (CuI) has emerged as a promising p‐type alternative to the predominantly used n‐type metal oxide semiconductors. However, the lack of effective doping methods hinders the utility of CuI in various applications. Sulfur (S)‐doping through liquid iodination is previously reported to significantly enhance electrical conductivity up to 511 S cm−1. In this paper, the underlying doping mechanism with various S‐dopants is explored, and suggested a method for controlling electrical conductivity, which is important to various applications, especially thermoelectric (TE) materials. Subsequently, electric and TE properties are systematically controlled by adjusting the carrier concentration from 3.0 × 1019 to 4.5 × 1020 cm−3, and accurately measured thermal conductivity with respect to carrier concentration and film thickness. Sulfur‐doped CuI (CuI:S) thin films exhibited a maximum power factor of 5.76 µW cm−1 K−2 at a carrier concentration of 1.3 × 1020 cm−3, and a TE figure of merit (ZT) of 0.25. Furthermore, a transparent and flexible TE power generator is developed, with an impressive output power density of 43 nW cm−2 at a temperature differential of 30 K. Mechanical durability tests validated the potential of CuI:S films in transparent and flexible TE applications.

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Study on nanocrystalline silicon thin films grown by the filtered cathodic vacuum arc technique using boron doped solid silicon for fast photo detectors

Tripathi

Panwar

Rawal

et al. 2018

Journal of the Taiwan Institute of Chemical Engineers

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Electronic transport mechanism in intrinsic and doped nanocrystalline silicon films deposited by RF-magnetron sputtering at low temperature

Cited by 5 publications

References 30 publications

Dopant Control of Solution‐Processed CuI:S for Highly Conductive p‐Type Transparent Electrode

Dopant Control of Solution‐Processed CuI:S for Highly Conductive p‐Type Transparent Electrode

Exploring Doping Mechanisms and Modulating Carrier Concentration in Copper Iodide: Applications in Thermoelectric Materials

Study on nanocrystalline silicon thin films grown by the filtered cathodic vacuum arc technique using boron doped solid silicon for fast photo detectors

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