Electronic transport properties of amorphous Ti-Ni and Hf-Ni alloys

Abstract

Measurements of elediical resistivity p and the Hall cmfficient RH of codeposited amorphous T L N i X films f" 1.7 K to 300 K over the composition range 0.08 c x < 0.72 along with measurements of the Hall Coefficient for four compositions of melt-spun amorphous Hf~-xNlx ribbons are reported. RH changes sign from positive to negative as the Ni concentration is increased and has a weak temperature dependence. The Hall resistivity of Ni-rich alloys indicates a ferromagnetic transition. For Ni-based amorphous alloys. the critical concentration of Ni at which the Hall Mefficient changes sign from positive to negative doeS not vw appreciably for ETM components of ule same column. The room-temperature resistivity ranges from 190 to uw) pP cm and shows a small temperature dependence wilh a negative TCR. which is typical of amorphous alloys. RH -Rk (the Lorentz contribution) shows an almost universal scaling wilh p 2 as a function of Ni composition x for M (Hf, Zr, T W 4 i alloys.

Structural transition and glass-forming ability of the Ni–Hf system studied by molecular dynamics simulation

“…1 Rathnayaka et al observed that the Hall coefficient of an amorphous Ni-Hf alloy changes its sign from positive to negative while the Ni concentration increases and features weak temperature dependence. 2 Consequently, much attention has been paid, in recent decades, to study the crystal-to-amorphous transition in the Ni-Hf system by both experimental and theoretical methods. For instance, Buschow et al have produced amorphous alloys in the Ni-Hf system by melt spinning.…”