2007
DOI: 10.1021/nl072090c
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Electronic Transport Properties of Individual Chemically Reduced Graphene Oxide Sheets

Abstract: Individual graphene oxide sheets subjected to chemical reduction were electrically characterized as a function of temperature and external electric fields. The fully reduced monolayers exhibited conductivities ranging between 0.05 and 2 S/cm and field effect mobilities of 2-200 cm2/Vs at room temperature. Temperature-dependent electrical measurements and Raman spectroscopic investigations suggest that charge transport occurs via variable range hopping between intact graphene islands with sizes on the order of … Show more

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Cited by 2,226 publications
(1,477 citation statements)
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“…The temperature dependent transfer characteristics in Figure 2c indicate that the on/off ratio of the devices increases with decreasing temperature, a trend that has also been observed for individual monolayer of reduced GO. 18 The on/off ratio with temperature trend observed for FGS-PS thin films suggests that the FGS are well dispersed and remain exfoliated in the PS matrix. The I sd -V sd characteristics of the devices were linear even at 4.2 K, indicating negligible energy barriers at the contacts (Figure 2d).…”
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confidence: 93%
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“…The temperature dependent transfer characteristics in Figure 2c indicate that the on/off ratio of the devices increases with decreasing temperature, a trend that has also been observed for individual monolayer of reduced GO. 18 The on/off ratio with temperature trend observed for FGS-PS thin films suggests that the FGS are well dispersed and remain exfoliated in the PS matrix. The I sd -V sd characteristics of the devices were linear even at 4.2 K, indicating negligible energy barriers at the contacts (Figure 2d).…”
mentioning
confidence: 93%
“…3 Conductance modulation by bottom-gating was observed in all measured devices and showed ambipolar field effect similar to reduced GO thin film transistors. 12,18 Field effect mobility was generally higher for holes than for electrons by a factor of about 2∼5 and was generally between 0.1 and 1 cm 2 /Vs in ambient conditions. Unlike reduced GO, the composite devices were weakly sensitive to unintentional ambient doping, suggesting that majority of FGS responsible for the carrier transport are embedded within the PS.…”
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“…Recently, researchers have circumvented the problem of mechanical cleavage by using graphite oxide (GO), a layered compound that can be readily dispersed as individual sheets in a good solvent. [15][16][17][18][19][20][21][22][23] Although GO itself is not electrically conductive, the conjugated network may be restored upon reduction in hydrazine vapor or with high heat after deposition. 18,21,22 However, both reduction methods have their drawbacks, as high temperatures are incompatible with flexible substrates (e.g., poly(ethylene terephthalate), PET) and hydrazine vapors are only able to access and reduce the outer surface of deposited films.…”
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confidence: 99%
“…6,7 Due to the limited efficiency of the reduction process, the obtained sheets still contain residual oxygenated functional groups of the starting material. Microscopic studies of the reduced GO also indicate the coexistence of graphitic regions with defect clusters 6,9 in agreement with proposed models. [9][10][11] In addition to its interesting electrical characteristics, this 2D material is expected to have also unique mechanical properties.…”
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confidence: 99%