Electronic transport properties of the Skutterudite CoSb/sub 3/ and mixed alloys

Matsubara, K.; Sakakibara, T.; Notohara, Y.; Anno, Hiroaki; Shimizu, H.; Koyanagi, T.

doi:10.1109/ict.1996.553264

Cited by 28 publications

(11 citation statements)

References 11 publications

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“…The calculated Seebeck coefficients without potential barriers agree well with those for bulk samples[16]. The interesting features of the calculation are the following: (1) the Seebeck coefficient increases with increasing potential barrier height due to the carrier energy filtering effect, and (2) the Seebeck coefficient at given potential barrier height decreases with increasing Carrier concentration, similarly to an ordinary semiconductor manner.The model calculation reproduces satisfactorily well the observed values, indicating that the large increase in the Seebeck coefficient can be explained in terms of the proposed model.…”

supporting

confidence: 69%

“…Figure 2 shows the Seebeck coefficient as a function of temperature for CoSb, films annealed at 750 "C with different thicknesses. For the film with thickness of 825 nm, the Seebeck coefficient is comparable to that for a bulk sample [16]. However, the films with thicknesses of 71 and 231 nm were found to have huge Seebeck coefficients about 600 -700 pV/K, which are about three times as large as that of the bulk sample.…”

Section: Methodsmentioning

confidence: 75%

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Preparation and thermoelectric properties of CoSb/sub 3/ thin films on GaAs(100) substrate

Anno

Sakakibara²,

Notohara³

et al.

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)

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The thin film growth of CoSb, on a semi-insulating GaAs(100) substrate was made by using magnetron If-sputtering, and the electrical and thermoelectric properties of the films were studied with relation to annealing temperature and film thickness. Polycrystalline films with the skutterudite structure were successfully grown on the GaAs(100) substrate. The obtained films were found to be p-type, and their hole mobility, electrical conductivity, and Seebeck coefficient significantly changed depending on the annealing temperature and the thickness. A huge Seebeck coefficient of 600 pV/K, which is about three times as large as the value of ap-type single crystal, was obtained for a thin film annealed at 750 "C with thickness of 71 nm, and the power factor reached the value of 2X 10" W/cmK2. The variation in the thermoelectric properties with the annealing temperature and the thickness can be explained well in terms of a model which takes into account a carrier energy filtering effect by potential barriers at grain boundaries. According to the model, the Seebeck coefficient increases with increasing potential barrier height and also decreases with increasing carrier concentration.

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supporting

confidence: 69%

Section: Methodsmentioning

confidence: 75%

Preparation and thermoelectric properties of CoSb/sub 3/ thin films on GaAs(100) substrate

Anno

Sakakibara²,

Notohara³

et al.

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)

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“…This means that at room temperature, these two samples have electrons as the major carriers, while the rest of the samples have holes as the major carriers. The nature (p-type or n-type) in CoSb 3 has been found to depend mainly on the chemical purity of the starting material [21] and also on the method of preparation. A slight deficiency of Sb leads to n-type conductivity while a deficiency of Co shows p-type conductivity.…”

Section: Electrical Conductivity (mentioning

confidence: 99%

Thermoelectric properties of Bi-added Co₄Sb₁₂skutterudites

Mallik

Anbalagan

Raut

et al. 2013

J. Phys.: Condens. Matter

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Void filling in (I) Bi(x)-added Co(4)Sb(12) or (II) Sb/Bi substitution of Co(4)Sb(12-x)Bi(x) has been investigated for structural and thermoelectric properties evaluation. X-ray powder data Rietveld refinements combined with electron probe microanalyses showed a polycrystalline and practically Bi-free CoSb(3) skutterudite phase as the major constituent as well as a secondary Bi phase in the grain boundaries. For series I alloys, the electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature in the range from 450 to 750 K. The electrical conductivity of all the samples increased with increasing temperature, showing a semiconducting nature with smaller values of the Seebeck coefficient for higher Bi fractions. Conduction over the entire temperature range was found to arise from a single p-type carrier. Thermal conductivity showed a reduction with Bi added in all the samples, except for Bi(0.75)Co(4)Sb(12), and the lowest lattice thermal conductivity was found for a Bi-added fraction of 0.5. The maximum zT value of 0.53 at 632 K is higher than that of Co(4)Sb(12).

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“…Compounds with an open lattice with large unit cells are then good candidates. Skutterudites [2][3][4][5] have been studied because atoms can be inserted in their lattice. This atoms are weakly bound and are therefore good scattering centres for phonons.…”

mentioning

confidence: 99%

Study of Chevrel phases for thermoelectric applications: band structure calculations on compounds (M = metal)

Roche¹,

Pécheur²,

Toussaint³

et al. 1998

J. Phys.: Condens. Matter

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Chevrel phases, , present large voids in their lattice, where cations can be inserted. These cations are weakly bound and constitute good scattering centres for phonons. The lattice thermal conductivity of these compounds must be very low, and these phases are then good candidates for thermoelectric application. But most of them are metallic and superconducting. Some band structure calculations have been performed in order to find a semiconducting one. and are found to be metallic and semiconducting.

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Electronic transport properties of the Skutterudite CoSb/sub 3/ and mixed alloys

Cited by 28 publications

References 11 publications

Preparation and thermoelectric properties of CoSb/sub 3/ thin films on GaAs(100) substrate

Preparation and thermoelectric properties of CoSb/sub 3/ thin films on GaAs(100) substrate

Thermoelectric properties of Bi-added Co₄Sb₁₂skutterudites

Study of Chevrel phases for thermoelectric applications: band structure calculations on compounds (M = metal)

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Electronic transport properties of the Skutterudite CoSb/sub 3/ and mixed alloys

Cited by 28 publications

References 11 publications

Preparation and thermoelectric properties of CoSb/sub 3/ thin films on GaAs(100) substrate

Preparation and thermoelectric properties of CoSb/sub 3/ thin films on GaAs(100) substrate

Thermoelectric properties of Bi-added Co4Sb12skutterudites

Study of Chevrel phases for thermoelectric applications: band structure calculations on compounds (M = metal)

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Thermoelectric properties of Bi-added Co₄Sb₁₂skutterudites