Electronic Transport Study of ZnTe and ZnSe

Abstract

The transport properties of electrons in ZnTe and ZnSe are of great interest because of their numerous technological applications. This paper investigates several calculation results of Monte Carlo device simulation. The average quantities directly accessible by the simulation are the drift velocity, the carriers’ energy and diffusion. The method we choosed to study the transport phenomena uses a three valley model (Γ, L, X) non-parabolic. The results have been obtained by applying the electric field in the direction <100>. Finally we compared our results with those obtained previously

Monte Carlo Simulation of Spin Relaxation in Nanowires and 2-D Channels of Ii–vi Semiconductors

“…Following table lists the parameters used for our simulations for various II-VI semiconductor materials [38][39][40][41][42][43][44]. These results have been tabulated in Table 2 and plotted in bar graphs in figures 2 and 3.…”