Abstract:Electric conductivity variations of hydrogenated amorphous silicon due to self-ion irradiation, i.e. irradiation with Si or H ions, are comprehensively investigated. The anomalous enhancement of dark conductivity (DC) and photoconductivity (PC) are firstly observed due to proton irradiation in the cases of undoped and n-type a-Si:Hs, and after that both decrease with increasing the irradiation fluence. However, Si ion irradiation does not induce the anomalous enhancement and induce a monotonic decrease in DC a… Show more
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