1966
DOI: 10.1109/t-ed.1966.15652
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Electronic tuning effects in the read microwave avalanche diode

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Cited by 210 publications
(37 citation statements)
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“…1: (1) the narrow avalanche area, where the electric field is strong enough to cause carriers avalanche multiplication by impact ionization [14,24,25]; (2) the drift area, where no carriers are generated and carriers travel at their saturated velocities; (3) the inactive area which presents the undesirable parasitic resistance of avalanche diode [26].…”
Section: The Nonlinear Model Of Avalanche Diode For High Order Frequementioning
confidence: 99%
“…1: (1) the narrow avalanche area, where the electric field is strong enough to cause carriers avalanche multiplication by impact ionization [14,24,25]; (2) the drift area, where no carriers are generated and carriers travel at their saturated velocities; (3) the inactive area which presents the undesirable parasitic resistance of avalanche diode [26].…”
Section: The Nonlinear Model Of Avalanche Diode For High Order Frequementioning
confidence: 99%
“…In avalanche multiplication I s is so small compared to I a that it could be neglected [26][27][28]. Solving the differential equation of (4), the expression of I a is derived:…”
Section: The Operation Of High Order Frequency Multiplicationmentioning
confidence: 99%
“…According to the analysis of [28,30], the harmonic impedance Z n of avalanche diode at frequency nω can be expressed:…”
Section: The Operation Of High Order Frequency Multiplicationmentioning
confidence: 99%
“…And equation (4) could be simplified by substituting a E ð Þ in place of α(E), where a E ð Þ is an average value of α(E) obtained by evaluating the integral over the extent of the avalanche region [12]. The average ionization rate a E ð Þ is also an exponential function of electric field.…”
Section: Figmentioning
confidence: 99%