“…1: (1) the narrow avalanche area, where the electric field is strong enough to cause carriers avalanche multiplication by impact ionization [14,24,25]; (2) the drift area, where no carriers are generated and carriers travel at their saturated velocities; (3) the inactive area which presents the undesirable parasitic resistance of avalanche diode [26].…”
Section: The Nonlinear Model Of Avalanche Diode For High Order Frequementioning
Abstract-A research of W band microstrip integrated high order frequency multiplier based on avalanche diode is presented. The associated nonlinear model of avalanche diode driven by external RF signals for high order frequency multiplication is presented and analyzed according to the physical property of avalanche diode. Subsequently the circuit of microstrip integrated high order multiplier is analyzed. In experiment, maximum output power of 6.5 mW with the efficiency of about 0.62% is obtained at output frequency of 94.5 GHz with 15th multiplication order. The phase noise of output 94.5 GHz signal is about −90.83 dBc/Hz and −95.67 dBc/Hz at 10 KHz and 100 KHz offset.
“…1: (1) the narrow avalanche area, where the electric field is strong enough to cause carriers avalanche multiplication by impact ionization [14,24,25]; (2) the drift area, where no carriers are generated and carriers travel at their saturated velocities; (3) the inactive area which presents the undesirable parasitic resistance of avalanche diode [26].…”
Section: The Nonlinear Model Of Avalanche Diode For High Order Frequementioning
Abstract-A research of W band microstrip integrated high order frequency multiplier based on avalanche diode is presented. The associated nonlinear model of avalanche diode driven by external RF signals for high order frequency multiplication is presented and analyzed according to the physical property of avalanche diode. Subsequently the circuit of microstrip integrated high order multiplier is analyzed. In experiment, maximum output power of 6.5 mW with the efficiency of about 0.62% is obtained at output frequency of 94.5 GHz with 15th multiplication order. The phase noise of output 94.5 GHz signal is about −90.83 dBc/Hz and −95.67 dBc/Hz at 10 KHz and 100 KHz offset.
“…In avalanche multiplication I s is so small compared to I a that it could be neglected [26][27][28]. Solving the differential equation of (4), the expression of I a is derived:…”
Section: The Operation Of High Order Frequency Multiplicationmentioning
confidence: 99%
“…According to the analysis of [28,30], the harmonic impedance Z n of avalanche diode at frequency nω can be expressed:…”
Section: The Operation Of High Order Frequency Multiplicationmentioning
Abstract-A research of millimeter wave high order frequency multiplier based on the fierce inductive nonlinearity of avalanche diode is presented. The operation of high order frequency multiplication is introduced, and the high order harmonics generation character under external RF field modulation is analyzed. The characteristic of multiplier circuit is also discussed. Maximum output power of 6 mW and minimum conversion loss of 17 dB are obtained at output frequencies of 94 GHz and 96 GHz with 15th multiplication order. The phase noise of output 94 GHz signal is about −90 dBc/Hz and −94.33 dBc/Hz at 10 kHz and 100 kHz offset.
“…And equation (4) could be simplified by substituting a E ð Þ in place of α(E), where a E ð Þ is an average value of α(E) obtained by evaluating the integral over the extent of the avalanche region [12]. The average ionization rate a E ð Þ is also an exponential function of electric field.…”
The high degree nonlinearity properties of avalanche diode render itself suitable for high order frequency multiplication in a single stage. This paper first analyzes the mechanism of multiplication mode, and introduces the principle of high order frequency multiplier. In experiment, the multiplier has achieved maximum 7 dBm output power and 19 dB conversion loss at the output frequency of 94.5 GHz with 15th multiplication order.
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