Electronics and Photonics Integration on Non-Crystalline Substrates via Nanoheteroepitaxy

Abstract

The ability to grow dissimilar materials with large lattice mismatches on a single substrate removes the integration related constraints of incorporating photonics with electronics. We review our recent nanoheteroepitaxy efforts on the epitaxial growth of bridged InP NWs between two vertical, (111)-oriented Si surfaces by forming connections during the NW growth facilitating their direct electrical probing via Si electrodes and a new method of synthesizing III-V NWs on a non-single crystalline surface that directly relaxes any lattice matching conditions. The currentvoltage behavior with temperature and the resulting photoenhanced thermal failure is also discussed.