Electronics Irradiation With Neutrons at the NEAR Station of the n_TOF Spallation Source at CERN

Abstract

We study the neutron field at the NEAR station of the neutron time of flight (n_TOF) facility at CERN, through Monte Carlo simulations, well-characterized static random access memories (SRAMs) and radio-photo-luminescence (RPL) dosimeters, with the aim of providing neutrons for electronics irradiation. Particle fluxes and typical quantities relevant for electronics testing were simulated for several test positions at NEAR and compared to those at the CERN high energy accelerator mixed-field facility (CHARM), highlighting similitudes and differences. The SRAM detectors, based on single event upset (SEU) and single event latch-up (SEL) counts, each one with a different energy response, and RPL dosimeters were tested in a reference position and the results were benchmarked to FLUKA simulations. Finally, the neutron spectra at NEAR are compared to those of the most well-known spallation sources and typical environments of interest, for accelerator and atmospheric applications, showing the potential of the facility for electronics irradiation.

Characterization of Radiophotoluminescence Dosimeters Under X-Ray Irradiation at High Doses

“…as particle accelerators, high-power targets, fission and fusion technologies, medical physics, space exploration, and in the field of radioactive waste management. They are routinely used at CERN in a wide range of areas and conditions, supporting several irradiation activities, such as the ones related to the Radiation to Electronics project [2,[12][13][14]. For example, RPL dosimetry service is often involved in the organisation of irradiation campaigns outsourced to various external facilities for the characterisation and qualification of materials and components for use in high radiation areas, targeting doses in the MGy range [2].…”