“…Current and projected cell sizes for DRAMS are: 1 megabit (1 Mb), now commercially available, 30 pm2; 4 Mb, 1989, 13 pm2;16 Mb, 1992, 5 pm2;64 Mb, 1995,2 pm2 (Robinson, 1986a. Research structures have been reported with features nearly 100 times smaller than those used in commercial integrated circuits (Howard et al, 1986). A transistor that recently set a speed record of 6-ps switching time had an undoped gallium arsenide spacer layer of 20 to 40 A (Robinson, 1986b).…”