Electrophoretic Assembly of Porous Silicon

Li, Huaixiang; Xue, Chunlai; Zhang, Hua; Guo, Chenghua; Li, Chuanbo; Chen, Lusheng; Diao, Zhaoyu

doi:10.1142/s0217979202015315

Cited by 4 publications

(4 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…12) The band at 1109 cm À1 corresponds to the vibration absorption of Si-O bonds. 13) It can be observed that a weak and broad band at 558 cm À1 corresponds to the stretching vibration absorption of Ga-N bonds in a hexagonal GaN crystal, 14) indicating that there are a small number of Ga-N bonds in the films. Figure 3(b) shows the FTIR spectrum of the GaN films annealed at 950 C for 15 min in high-purity ammonia ambience.…”

Section: Ftir Analysismentioning

confidence: 99%

Annealing of GaN/ZnO/Si Films Deposited by Pulsed Laser Deposition

Yang

Man

Zhuang

et al. 2007

jjap

View full text Add to dashboard Cite

ZnO buffer layers were used in the fabrication of GaN films by pulsed laser deposition (PLD) in order to improve the initial nucleation and growth of GaN films when they are annealed in ammonia ambience at different temperatures. The crystalline quality, composition and surface morphology of the films were characterized by X-ray diffraction (XRD) analysis, Fourier transform infrared (FTIR) analysis and atomic force microscopy (AFM). Through the analyses of measured results, a conclusion can be drawn that the crystalline quality of GaN films deposited on ZnO buffer layers is much higher than that of those deposited directly on Si substrates with the volatilization of ZnO. The volatilization of ZnO buffer layers gives the grains of GaN more chances to move and form Ga-N bonds at high temperatures. The annealing temperature markedly affects the preparation of GaN films and the optimum annealing temperature is 950 C under our experimental conditions.

show abstract

Section: Ftir Analysismentioning

confidence: 99%

Annealing of GaN/ZnO/Si Films Deposited by Pulsed Laser Deposition

Yang

Man

Zhuang

et al. 2007

jjap

View full text Add to dashboard Cite

show abstract

“…We have previously studied the photoluminescence, electrophoretic assembly and photoluminescent enhancement properties of porous silicon based on n-type single-crystal (111) silicon wafers [23][24][25]. In this study, In this work, we have fabricated a unique electrode based on aminopropyl-triethoxysilane(APTS)-coated porous silicon(PS) substrate and used it as a urea-sensitive electrode after urease immobilization.…”

Section: Introductionmentioning

confidence: 99%

Study on Urea-Sensitive Electrode Based Porous Silicon

Wang

Wei

et al. 2011

AMR

View full text Add to dashboard Cite

In this work, a unique electrode based on aminopropyl-triethoxysilane ( APTS)-coated porous silicon(PS) substrate has been fabricared and used as a urea-sensitive electrode after urease immobilization. PS substrate was formed by electrochemical anodization in an etching solution composed of HF and ethanol. APTS layer was formed on the PS surface by coating and heating at 1053K in argon atmosphere. Urease immobilization was carried out by immersing the APTS/PS in urease solution. The immobilized system gives linear response for concentrations of urea ranging in values between 3.6×10−3and 8.0×10−3mol dm-3, studied with voltammetry. The surface of biofunctionized porous silicon has thus provided a suitable environment for urease with 15 days retention of its activity. The molecular structure on the PS surface was characterized with infrared (IR) technique. The change in the surface morphology has been studied by scanning electron microscopy and it is observed that the immobilized system has successfully retained urease.

show abstract

“…We have previously studied the photoluminescence properties of porous silicon based on n-type single-crystal (111) silicon wafers [27][28][29] and used the electrolysis technique to prepare zinc oxide nanoparticles suspended in ethanol solution and of zinc oxide powder with strong photoluminescence (PL) at room temperature [30]. In this paper, we will present the formation of transparent ZnO films from zinc nitrate aqueous solution by pulsed current of rectangular wave and the modification of porous silicon with the ZnO films based on the cathodic electrochemical deposition technique.…”

Section: Introductionmentioning

confidence: 99%

Porous Silicon Modification with ZnO Films Electro-Deposited from Zinc Nitrate Aqueous Solution by Pulsed Current of Rectangular Wave

Chen

Liu

Ban

et al. 2011

AMR

View full text Add to dashboard Cite

The pulsed current of rectangular wave was used to electrolyzing zinc nitrate aqueous solution for the purpose of preparation of a transparent zinc oxide (ZnO) film by cathodic deposition. The current density of rectangular wave was 0.2 and 1.0 mA/cm2, respectively. The former plays a role to deposit homogenous ZnO particles on the substrate surface and the latter plays the role to promote further growth of the particles and film formation. The structural and optical characterizations of the deposited films were performed with x-ray diffraction, scanning electron microscope, and measurements of optical absorption in UV-vis range. Similar technique has been used to modify as prepared porous silicon, resulting a green photoluminescence after 1 h annealing at 1273 K under oxygen atomsphere.

show abstract

Electrophoretic Assembly of Porous Silicon

Cited by 4 publications

References 11 publications

Annealing of GaN/ZnO/Si Films Deposited by Pulsed Laser Deposition

Annealing of GaN/ZnO/Si Films Deposited by Pulsed Laser Deposition

Study on Urea-Sensitive Electrode Based Porous Silicon

Porous Silicon Modification with ZnO Films Electro-Deposited from Zinc Nitrate Aqueous Solution by Pulsed Current of Rectangular Wave

Contact Info

Product

Resources

About