Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons

Kalinina, Evgenia V.; Lebedev, Alexander A.; Kozlovski, V. V.; Zabrodskiy, V. V.; Strel'chuk, Anatoly M.; Никитина, И.П.

doi:10.4028/www.scientific.net/msf.963.722

Cited by 5 publications

(4 citation statements)

References 9 publications

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“…prepared SiC MSM‐PDs by CVD method, the PDs showed less than 10 −10 A dark current at −10 V after irradiated with 0.9 MeV electrons. [ 105 ] In the same year, they irradiated the PDs with 15 MeV protons, and found that there is no change in the photosensitivity of PDs. [ 106 ] In 2020, they studied the effect of temperature on the performance of SiC MSM‐PDs with 15 MeV protons irradiation, they found that the PDs have an increased QE under 200 °C than 25 °C, which can be attributed to an increase in the lifetime of minority carriers upon heating.…”

Section: Research Status Of Msm‐pdsmentioning

confidence: 99%

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Shi

Chen

Zhai

et al. 2020

Laser & Photonics Reviews

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Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great attention in many areas, such as optical fiber communication, sensing, missile guidance, etc., due to their inherent merits of high speed, high sensitivity, and easy integration. This review focuses on MSM‐PDs with the semiconductor layer made of inorganic materials including traditional semiconductors (such as GaAs and Si), the third‐generation wide bandgap semiconductors (such as GaN, ZnO, and SiC), as well as several emerging semiconductors (such as perovskites and 2D materials). First, the basic structures of MSM‐PDs, including the planar and vertical configurations, are presented. Then, their working principles of MSM‐PDs are discussed. Subsequently, the research progresses on MSM‐PDs consisting of different photosensitive semiconductor materials are described in detail. Additionally, the efforts to optimize MSM‐PDs from the aspects of dark current, response speed, responsivity, spectral adjustment, etc., are also introduced. Finally, the review is concluded with the perspectives of MSM‐PDs from the authors’ vision.

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Section: Research Status Of Msm‐pdsmentioning

confidence: 99%

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Shi

Chen

Zhai

et al. 2020

Laser & Photonics Reviews

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“…Recently, a full evaluation of the research development for the aforesaid MSM-PDs (covering the fundamental structures and materials type, manufacturing processes, operating wavelengths, and performance characteristics) was presented in Refs. [16,18,[62][63][64][65][66][67][68][69][70][71]. On the These two Schottky electrodes are routinely interconnected in a comb configuration in an MSM-PD, leaving a free semiconductor surface between the two contacts that produce and form the active zone in which the light will be caught.…”

Section: Basic Structures Of Msm-pds and Nano-grating Structuresmentioning

confidence: 99%

“…Recently, a full evaluation of the research development for the aforesaid MSM-PDs (covering the fundamental structures and materials type, manufacturing processes, operating wavelengths, and performance characteristics) was presented in Refs. [16,18,[62][63][64][65][66][67][68][69][70][71]. On the other hand, the choice of substrate materials is exclusively reliant on the kind of application and the wavelength-dependent responses that are required for the particular application.…”

Section: Basic Structures Of Msm-pds and Nano-grating Structuresmentioning

confidence: 99%

Nano-grating Assisted Light Absorption Enhancement for MSM-PDs Performance Improvement: An Updated Review

et al. 2021

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The primary focus of this review article mainly emphasizes the light absorption enhancement for various nanostructured gratings assisted metal-semiconductor-metal photodetectors (MSM-PDs) that are so far proposed and developed for the improvement of light capturing performance. The MSM-PDs are considered as one of the key elements in the optical and high-speed communication systems for applications such as faster optical fiber communication systems, sensor networks, high-speed chip-to-chip interconnects, and high-speed sampling. The light absorption enhancement makes the MSM-PDs an ideal candidate due to their excellent performances in detection, especially in satisfying the high-speed or high-performance device requirements. The nano-grating assisted MSM-PDs are preordained to be decorous for many emerging and existing communication device applications. There have been a significant number of research works conducted on the implementation of nano-gratings, and still, more researches are ongoing to raise the performance of MSM-PDs particularly, in terms of enhancing the light absorption potentialities. This review article aims to provide the latest update on the exertion of nano-grating structures suitable for further developments in the light absorption enhancement of the MSM-PDs.

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“…high-power and high temperature electronics as well as harsh environments [4][5][6][7][8][9][10][11]. Specifically, the most used polytype is the 4H-SiC featuring the highest bandgap value of 3.3 eV.…”

Section: Introductionmentioning

confidence: 99%

Defects in epitaxial 4H-SiC revealed by exciton recombination

Migliore,

Cannas,

Mario Gelardi

et al. 2024

J. Phys.: Condens. Matter

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In this work, we conducted an analysis of 4H-SiC epitaxial layer grown on two distinct 4H-SiC substrates (both 6 inches in diameter) using non-invasive techniques such as micro-Raman spectroscopy, steady-state absorption spectroscopy, and time-resolved photoluminescence spectroscopy. We have shown that despite the doping homogeneity, confirmed by micro-Raman and steady-state absorption spectroscopy, the carrier lifetime, assessed by monitoring the excitonic band at 3.2 eV by time-resolved photoluminescence spectroscopy, depends on the position on the wafer. This variability is attributed to the presence of defects, such as impurities or point defects, which are not uniformly distributed on the epitaxial layer and, in addition to extended defects, affect the charge carrier recombination. Additionally, it is found that interactions with the underlying substrate could contribute to these effects as evidenced in regions of the substrate characterized by differences of doping.

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Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons

Cited by 5 publications

References 9 publications

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Nano-grating Assisted Light Absorption Enhancement for MSM-PDs Performance Improvement: An Updated Review

Defects in epitaxial 4H-SiC revealed by exciton recombination

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