Electrophysical Characteristics of TlBr Crystals Grown in Various Ambients

Smirnov, N. B.; Lisitsky, I. S.; Кузнецов, М. С.; Govorkov, Anatolij; Кожухова, Е. А.

doi:10.1109/nssmic.2006.353796

Cited by 6 publications

(5 citation statements)

References 10 publications

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“…The first of these factors is viewed as dominant by many authors [8], [9]. The remaining factors have not attracted close attention, however, our results show that they can play a crucial role [10], [11].…”

Section: Crystal Growthcontrasting

confidence: 60%

“…However, as it can be seen in Figs. 5-7, that the energy resolution obtained at higher energies is rather better than measured previously [11]. Energy resolutions of 1.4 (2.3%); 2.1 (1.7%) and 7.1 keV (1.1%) were recorded at energies 59.6, 122, and 662 keV, respectively.…”

Section: Detector Performancementioning

confidence: 60%

“…Macroscopic defects (consisting of macro-blocks, large pores of diameter up to 10 mm, small pores groups up to 0.5 mm, thermal cracks, and shells on the crystal surface) have been studied by us previously in [10] and [11]. The character of these defects is related to the growth mode parameters.…”

Section: Crystal Growthmentioning

confidence: 99%

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Recent Results in TlBr Detector Crystals Performance

Shorohov¹,

Kouznetsov

Lisitskiy

et al. 2009

IEEE Trans. Nucl. Sci.

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Recent developments in TlBr material preparation and growth technology have led to much improved crystal quality, detector performances and most importantly, reproducibility. In this paper, we describe some of the technological steps we have developed that have allowed us to produce reproducible spectrometric grade crystals for detector applications and present spectroscopic results. Typical crystals have a specific resistance of (3 5) 10 11 Ohm-cm and mobility-life time products of about 10 4 cm 2 /V, for both electrons and the holes. After fabrication into simple planar detectors of area 5 5 mm 2 and thickness 2 mm, spectral resolutions of 0. 8, 1.4, 2.1, and 7.1 keV, have been achieved at incident energies of 5.9, 59.6, 122, and 662 keV, respectively. These results were obtained without collimation or employing single carrier sensing or depth correction techniques.

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Section: Crystal Growthcontrasting

confidence: 60%

Section: Detector Performancementioning

confidence: 60%

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Recent Results in TlBr Detector Crystals Performance

Shorohov¹,

Kouznetsov

Lisitskiy

et al. 2009

IEEE Trans. Nucl. Sci.

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“…We shall write the equation of electroneutrality as (7) The expression for the specific conductivity is as follows: (8) where N is the number of Tl ions per unit volume. Equations (5)-(7) are reduced to cubic equation relative to mole fraction of the anionic vacancies Х a .…”

Section: Resultsmentioning

confidence: 99%

“…On the other hand, in [8] electric and physical characteristics of TlBr crystals were studied and according to temperature dependences it was asserted that conductivity had an electron-hole nature. The conductivity activation energy of the studied crystals proved to be equal to 0.79 -0.85 eV.…”

Section: Introductionmentioning

confidence: 99%

The investigation of the ionic component of conductivity in TlBr

Gazizov¹,

Кузнецов

Lisitsky

et al. 2010

IEEE Nuclear Science Symposuim &Amp; Medical Imaging Conference

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The dark conductivity has been studied on pure and doped TlBr crystals obtained by Bridgement method with different compositions and pressures of the residual vapors over the melt. The specific resistance of the pure crystals at room temperature was (0.7-2) ⋅10 10 Ω⋅cm and that of doped crystals depended on the amount of the incorporated Pb impurity and was equal to 1.8⋅10 11 Ω⋅cm. The conductivity activation energy near room temperature was equal to 0.8-0.85 eV and 0.6-1.2 eV for the pure and doped crystals, respectively.The conductivity activation energy of the studied crystals is in agreements with the known values of the energies of formation and dislocation of Schottky defects in TlBr at high temperatures. The expression for the dependence of the crystal specific resistance on their content of Pb bivalent cations has been found.The equilibrium concentration of Schottky point defects in the studied TlBr pure crystals has been calculated and it was equal to 6.4⋅10 14 cm -3 . The displacement mobilities of anionic and cationic vacancies were μ a = 9.8 ⋅10 -7 cm 2 V -1 c -1 and μ c =3.4⋅10 -10 cm 2 V -1 c -1 , respectively. The studies have been carried out within the frame of the ISTC project # 2728.

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