Electrophysical properties of GaAs layers and the characteristics of fast particle GaAs detectors

Беспалов, В. А.; Воронцов, А. В.; Горбацевич, А. А.; Егоркин, В. И.; Zhigal'skii, G. P.; Il’ichev, É. A.; Kulakov, A. V.; Nalbandov, B. G.; Pantuev, V.; Rasputnyi, V. N.; Sveshnikov, Yu. N.; Shmelev, S. S.

doi:10.1134/1.1688416

Cited by 4 publications

(1 citation statement)

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“…The use of surface-barrier structures based on thin high-purity GaAs epilayers grown by vaporphase epitaxy (VPE GaAs) as an active part of fast neutron detectors is proposed in this work. This will allow increasing the signal-to-background ratio and significantly decreasing the operating bias of the detector as well as obtaining higher thermal stability in comparison with bulk SI GaAs material [15]. This could be a determining factor, e.g.…”

Section: Introductionmentioning

confidence: 99%

Fast neutron detector based on surface-barrier VPE GaAs structures

Черных

Didenko

et al. 2015

J. Inst.

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Surface-barrier structures based on thin high-purity GaAs epilayers with a polyethylene converter were studied as fast neutron detectors. A continuous Schottky barrier with a large area of 5 × 5 mm 2 to the high-purity GaAs epilayers was fabricated using a Pt/TiN/Au metallization system. Results of measurement of electric parameters and α-particle spectra are presented. The fast neutron spectra from the 241 Am-Be source measured by the recoil proton method for various thicknesses of the polyethylene converter and various operating biases are shown as well. The proposed detectors have shown high neutron detection efficiency of 1.30 • 10 −3 puls./neutr. and an acceptable signal-to-background ratio (at level of 50) as well as the capability to operate efficiently without any external bias.

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Section: Introductionmentioning

confidence: 99%