Electrophysical properties of PbTe doped with CdSe

Karmokov, A. M.; Калмыков, Рустам Мухамедович; Shomakhov, Z. V.

doi:10.1088/1742-6596/816/1/012006

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…In the figure 3 shows the dependences of the specific conductivity of the studied samples on the inverse temperature after isothermal annealing. The nature of the temperature dependence of the specific conductivity and its absolute values differ significantly from the results of studies obtained in [6]. After annealing the conductivity increases for the original unalloyed compound PbTe and has a maximum value of σ~424 (Ohm•cm) -1 at T=710 K. It is evident that small CdSe additives after isothermal annealing reduce conductivity.…”

Section: Resultscontrasting

confidence: 59%

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The Influence of Structural and Phase Changes on the Thermoelectric Properties of PbTe Doped with CdSe

Калмыков¹,

Karmokov

Ansokova³

2020

NHC

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In this article, the influence of structural and phase changes on the thermoelectric properties of PbTe doped with CdSe compounds of various molar concentrations were studied. The research showed that with a minimum value of the lattice parameter of the formed new phases in the PbTe matrix (at an impurity concentration of 0.5 mol%), the specific electrical conductivity and thermoEMF coefficient have a minimum value. A further increase in concentration leads to an increase in these parameters.

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Section: Resultscontrasting

confidence: 59%

“…Compared to the results of [6], conducting isothermal annealing significantly increases the thermoelectric power of the samples. The thermoelectric power value for the initial undoped PbTe compound after annealing increases from 6.8 μW/(K 2 •cm) to 38.1 μW/(K 2 •cm) at a temperature T=450 K (line 1, fig.…”

Section: Resultsmentioning

confidence: 72%