Electrophysical properties of surface phases of In on Si(111)

Gasparov, V. A.; Grazhulis, V.A.; Bondarev, V.V.; Bychkova, T.M.; Lifshits, V.G.; Churusov, B.K.

doi:10.1016/0038-1098(93)90768-i

Cited by 2 publications

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“…In our group several studies of conductance and structural properties of metal films (Cr, In, Pb) on semiconductor surfaces have been performed. We reported on the growth and the exsitu temperature dependence of the electrical conductivity and the magnetoresistance tensor components of the Si(111)-Cr(√3×√3)R30 o , Si-In(1×1) R30 o surface phase and of ultrathin Si-Cr films covered by a thin amorphous αSi protecting layer [21,22]. We found that Si-In-αSi SP is a 2D semiconductor with an enhanced mobility, while Si-Cr-αSi SP behaves metallic with a rather low mobility.…”

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confidence: 99%

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Gasparov

Riehl-Chudoba

2007

Surface Science

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We studied the low temperature (T≤130Κ) growth of Ag on Si(001) and Si(111) flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallic films. The band structure and morphology of the Ag overlayers have been investigated by means of XPS, UPS, LEED, STM and STS. Surprisingly a (√3x√3)R30 o LEED structure for Ag films has been observed after deposition of 2-6 ML Ag onto a Si(111)(√3x√3)R30 o Ag surface at low temperatures. XPS investigations showed that these films are solid, and UPS measurements indicate that they are metallic. However, after closer STM studies we found that these films consists of sharp Ag islands and (√3x√3)R30 o Ag flat terraces in between. On Si(001) the low-temperature deposition yields an epitaxial growth of Ag on clean Si(001)2x1 with a twinned Ag(111) structure at coverage's as low as 10 ML. Furthermore the conductivity of few monolayer Ag films on Si(100) surfaces has been studied as a function of temperature (40-300 K).

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Section: Introductionmentioning

confidence: 99%

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Gasparov

Riehl-Chudoba

2007

Surface Science

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Surface and electronic structure of 6H-SiC(0001)-(3 × 3) surfaces and ultrathin Ag films on Si(111) and Si(001)

Gasparov

2011

Low Temperature Physics

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Surface topographic (LEED, STM) and spectroscopic (ARUPS, XPS, STS) studies have been performed on Si-terminated 6H-SiC(0001)-(3 × 3) surfaces and Ag superstructures and ultrathin films on Si(001) and Si(111) surfaces, using a scanning tunneling microscope (STM) in ultrahigh vacuum. Our results confirm that 2D epitaxial metal growth is favored on Si(001) at low temperatures and a solid, two-domain Ag(111) film has been achieved at coverages as low as 10 ML. The films reveal a morphology with 3-dimensional features and with a well defined honeycomb structure in between. An atomically flat Si(111)/Ag-(3×3)R30∘ surface has been modified by use of a scanning tunneling microscope (STM) in ultrahigh vacuum (UHV). High quality 6H-SiC(0001)-(3 × 3) and Si(111)/-Ag(3×3)R30∘ upper structures have been prepared and studied by means of ARUPS, XPS and LEED. The local density of states proportional to the spectrum of normalized differential conductivity (dI/dV)/(I/V) vs V reveals distinct bands of empty (−0.6 eV) and filled (0.65 eV) sites separated by 1.2 eV, for both areas. The results support the use of a Mott-Hubbard-type model for calculating the density of states of 6H-SiC(0001)-(3 × 3) surfaces with a Hubbard gap of 1 eV.

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Electrophysical properties of surface phases of In on Si(111)

Cited by 2 publications

References 7 publications

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Surface and electronic structure of 6H-SiC(0001)-(3 × 3) surfaces and ultrathin Ag films on Si(111) and Si(001)

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