Electroreflectance

Seraphin, B. O.

doi:10.1007/978-1-4757-1123-3_7

Cited by 8 publications

(8 citation statements)

References 68 publications

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“…Because of the possibility of modulating the very large electric fields associated with space-charge layers (23), electroreflectance (ER) can be an ideal technique in the study of the semiconductor/electrolyte interface. The principles and techniques of electroreflectance have been reviewed by Cardona (15) and Seraphin (16,24), and, more recently, the application to semiconductor electrodes has been discussed by Pollak (25).…”

Section: Methodsmentioning

confidence: 99%

“…The electrorefiectance signal is defined by AR R(E) -Ro [2] Ro Ro where R(E) is the optical reflectance when an internal electric field E is present, and Ro is the reflectance in the absence of such a field. The reflectance change depends on both, the real part er and the imaginary part 9 of the dielectric constant e and their changes &er, A~i (27) AR/Ro = a(er, ei)he~ + ~(er, 9 [3] It turns out that at low photon energies (typically ~< 3 eV), the factor a can be much larger than fl so that the reflectance change is mainly controlled by the change of the real part of e (24,36).…”

Section: Methodsmentioning

confidence: 99%

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Electroreflection Measurements on Semiconductor/Electrolyte Interfaces to Determine the Voltage Distribution

Scholz

Genscher

1985

J. Electrochem. Soc.

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The electroreflectance signal from a semiconductor electrode surface is sensitive to the magnitude of the space charge. It is used to determine the voltage distribution between the space‐charge layer and the Helmholtz double layer at an electrode/electrolyte interface. In this paper, the first of two, we describe the experimental arrangements and measurements of the electroreflectance spectra for normaln‐MoSe2 and normaln‐WSe2 under anodic and cathodic bias. Important features in the spectra are found to be in agreement with existing theories. Flatband values inferred from the electroreflectance spectra are in agreement with those from Mott‐Schottky plots. The effects of Fermi level pinning on the electroreflectance spectra are demonstrated with normaln‐normalGaAs .

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Electroreflection Measurements on Semiconductor/Electrolyte Interfaces to Determine the Voltage Distribution

Scholz

Genscher

1985

J. Electrochem. Soc.

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“…[47,48] This technique is mainly used to determine the dielectric function and the thickness of thin films. [49] First introduced by Seraphin, [50] electroreflectance (ER) is used for the determination of internal parameters of thin-film solar cells such as the internal electric field and the band gaps of the different junctions. [51] RAS, on the other hand, is a "static" reflection technique which allows accessing the real part of the optical response.…”

Section: Experimental Realizationmentioning

confidence: 99%

Experimental and Computational Aspects of Electrochemical Reflection Anisotropy Spectroscopy: A Review

et al. 2023

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Electrode/electrolyte interfaces play a crucial role in many electrochemical energy conversion and storage technologies. Hence, a deep understanding of the interfacial structure, energetic alignment and processes is of high relevance and has triggered the development of a number of in situ and operando techniques. One approach for gaining information about the change in surface chemistry and structure on an atomic scale is reflection anisotropy spectroscopy (RAS). This review presents and discusses the continuing effort to develop RAS as an in situ optical probe for solid‐liquid interfaces under applied potentials. Experimental and computational basic principles are presented and key challenges of electrochemical RAS are highlighted. Furthermore, we exemplarily demonstrate the potential of the method for spectroelectrochemistry, focusing on indium phosphide‐ and gold‐aqueous electrolyte interfaces as exemplary case studies, and outline research directions for battery systems.

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“…The real part of this function, and hence the index of refraction, can be obtained by an analysis using the Kramers-Kronig relations (6.5.14). This furnishes the basis for a popular and useful method of studying the band structure of semiconductors (Seraphin, 1972;Cardona, 1969;Aspnes and Bottka, 1971). An exphcit expression can be obtained for this (Aspnes, 1967).…”

Section: 72 Electroabsorptionmentioning

confidence: 99%

External Fields

Callaway

1991

Quantum Theory of the Solid State

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Electroreflectance

Cited by 8 publications

References 68 publications

Electroreflection Measurements on Semiconductor/Electrolyte Interfaces to Determine the Voltage Distribution

Electroreflection Measurements on Semiconductor/Electrolyte Interfaces to Determine the Voltage Distribution

Experimental and Computational Aspects of Electrochemical Reflection Anisotropy Spectroscopy: A Review

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