Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indium–tin–oxide-coated glass electrode in soft contact mode

Abstract

Articles you may be interested inPhotoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations Rev. Sci. Instrum. 80, 096103 (2009); 10.1063/1.3213613 Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy Determination of band offsets in semiconductor quantum well structures using surface photovoltage J. Appl. Phys. 94, 3955 (2003); 10.1063/1.1603346 Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surfaceemitting laser structureMeasurements of electroreflectance and surface photovoltage spectroscopy of semiconductor structures are described using a transparent indium-tin-oxide-coated glass electrode in soft contact mode on the semiconductor surface. This improvisation ͑simplification͒ reduces the magnitude of the ac modulation voltage necessary for the electroreflectance measurement to less than a volt from about a kV ͑ϳ10 3 V͒ as required in the conventional contactless setup. This soft contact mode also enhances the sensitivity of the surface photovoltage signal by three orders of magnitude. We also formulate an analytical criterion to extract the transition energies of a quantum well from the surface photovoltage spectrum.

An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques

“…The small ac voltage was measured in "soft contact" capacitorlike geometry, wherein a transparent conducting glass front electrode was pressed gently against the front surface of the sample, whose back surface was attached with conducting silver paste to a flat grounded copper electrode. 10,11 The front contact could alternatively be formed more conveniently by attaching a fine copper wire to the front surface of the sample with a small drop of conducting silver paste. In this case, the monochromator light was focused in the vicinity of the small silver drop.…”

Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures

“…SPS signals with respect to the photon energy, ∂(E × SPS)/∂E [6]. The so-called differential SPS (DSPS) spectra are shown in Fig.…”

“…To obtain the QW transition energies we choose the way where such a derivative of SPS spectrum resembles a modulated reflectance spectrum [6], and for fitting to DSPS data we can use well-known Aspnes function, given by [7]:…”

Study of excitonic transitions in δ-doped GaAs/AlAs quantum wells

“…The doping level and the main characteristics of samples are summarized in Table 1. The SPV measurements were done in a chopped light geometry using a capacitor-like system with a transparent conducting top electrode under normalized incident light intensity conditions [8]. The illumination intensity was selected at sufficiently low levels in order not to affect the line shape of the spectra.…”