Electroreflectance study of antimony doped ZnO thin films grown by pulsed laser deposition

Jessadaluk, Sukittaya; Khemasiri, Narathon; Rattanawarinchai, Prapakorn; Kayunkid, Navaphun; Rahong, Sakon; Rangkasikorn, Adirek; Wirunchit, Supamas; Klamchuen, Annop; Nukeaw, Jiti

doi:10.1016/j.optmat.2021.111461

Cited by 6 publications

(4 citation statements)

References 38 publications

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“…The Sb-peaks clearly indicated that The change in the value of E g with the increasing weight percentage of Sb 2 O 3 shows a similar trend to the change in carrier concentration with a rising weight percentage of Sb 2 O 3 . However, the carrier concentrations of 3 wt.% and 5 wt.% SZO thin films are lower than the critical concentration (N c ) of 1.14 × 10 19 cm −3 for the B-M effect [33]. Moreover, the optical bandgap as a function of n 2/3 was plotted to explore the B-M shift of the SZO thin films, as shown in Figure S5.…”

Section: Resultsmentioning

confidence: 99%

Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition

et al. 2023

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This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb2O3:ZnO-ablating target. By increasing the content of Sb2O3 (wt.%) in the target, Sb3+ became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb2O3. The substituted Sb species in the Zn site (SbZn3+ and SbZn+) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb–Zn complex defects (SbZn–2VZn) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb2O3 content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p–n junctions.

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Section: Resultsmentioning

confidence: 99%

Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition

et al. 2023

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“…This is because the number of local energy levels in the optical energy band gap decreases, and thus the number of Urbach tails decreases, and this leads to an increase in the optical energy band gap. This increase can be attributed to the Bureshtain-Moss effect [13].…”

Section: Optical Propertiesmentioning

confidence: 95%

“…Figure (4) shows that, for all doping ratios, the doping of zinc oxide increased the optical energy gap, which meant that the absorption edge was displaced away from high energies as a result of the doping. The Bureshtain-Moss shift [13] can account for this rise, and since the levels close to the conduction band are filled with electrons, the electrons require more energy to jump, which gives the appearance that the energy gap is increasing. The energy of the Urbach tails for un-doped and ZnO:Sn thin films doped was shown in figure (5), where it can be seen that its value decreases as the percentage of doping with different ratios increases.…”

Section: Optical Propertiesmentioning

confidence: 99%

Enhanced the Physical Properties of Thin Films by Doping Zinc Oxide with Tin Prepared by the Pyrolysis Technique

Abdullah

2023

JK-Physics

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Spray pyrolysis was used in this work to create un-doped ZnO and Sn-doped films with varying mass fractions (2, 4, 6, and 8wt.%) of doping on a glass substrate. The effect of Sn doping on the optical and structural characteristics of the produced thin films was investigated. All of the films were polycrystalline and possessed a structure of hexagonal wurtzite with a preference for orientation along the (002) plane, according to XRD investigations. The peak intensity (002) for 6 wt% is higher than all of the chosen doping ratios. Except for the 8% that was (21) nm, the grain size (D) increased from (22-26) nm as the percentage of Sn doping increased. In order to evaluate the optical characteristics, the absorption and transmittance spectra were recorded in different wavelength ranges of 380-900 nm. This shows that, compared to the un-doped film, the absorbance decreases as the amount of doped tin increases. When the doping ratio ranged from (0 - 8) wt%, the optical energy gap was (3.23-3.59) eV. The transmittance increases with the percentage of Sn doping, reaching its maximum value (72%) at (8%) doping.

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“…Zinc oxide thin films have been prepared by various methods, such as nebulizer spray method [5][6][7], chemical vapor deposition [8,9], chemical bath deposition [10,11], sol-gel [12,13], thermal evaporation [14,15], sputtering [16,17] and pulsed laser deposition [18,19] have been deposited for the prodcution of ZnO films. Nebulizer spray pyrolysis techniques has received a little bit of more advantages due to their better homogeneity, stoichiometry control, low cost effectiveness, low processing temperature, simplicity and easier deposition of large area films, and compared to other methods, which allow the possibility of prepared films with the required properties for various applications.…”

Section: Introductionmentioning

confidence: 99%

Low-cost nebulizer spray deposited conduction mechanism of thin film ZnO nanoparticles

Amudhavalli¹,

Mariappan²,

Prasath³

2023

JOR

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The Zinc Oxide (ZnO) thin films have been deposited on glass substrate at different temperature from 300 to 500 o C by nebulizer spray pyrolysis technique. The prepared films were characterized by X-Ray diffraction (XRD), High resolution scanning electron microscope (HRSEM), Energy dispersive analysis by X-rays (EDAX), Photoluminescence (PL), UV-Vis-NIR spectrometer and impedance spectroscopy, respectively. The XRD confirms that the films are polycrystalline in nature with hexagonal wurtzite crystal structure with (002) plane as preferential orientation. The various parameters such as crystallite size, micro strain, and dislocation density were calculated from X-ray diffraction. HR-SEM images show smooth, tiny grains and dense morphology. The PL studies exhibits two emission peaks one at 389 nm corresponding to band gap excitonic emission and another located at 490 nm due to the presence of singly ionized oxygen vacancies. The UV-Vis-NIR spectrometer confirms the possibility of good transparent ZnO films with an average transmission of about ~85-95% in the visible region and optical band gap shifted from 3.37 eV to 3.2 eV with increase in temperature and which is supported by PL study. The semiconductor bahaviour and activation energy of these films have been confirmed by impedance spectroscopy measurements.

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Electroreflectance study of antimony doped ZnO thin films grown by pulsed laser deposition

Cited by 6 publications

References 38 publications

Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition

Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition

Enhanced the Physical Properties of Thin Films by Doping Zinc Oxide with Tin Prepared by the Pyrolysis Technique

Low-cost nebulizer spray deposited conduction mechanism of thin film ZnO nanoparticles

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