Search citation statements
Paper Sections
Citation Types
Year Published
Publication Types
Relationship
Authors
Journals
This work demonstrates direct, rapid 2D thermal mapping measurement capabilities of the ultrawide bandgap semiconductor channel of lateral β-(AlxGa1−x)2O3/Ga2O3 transistors without sample contamination, long acquisition times, or sophisticated thermometry such as developing deep-ultra-violet compatible thermoreflectance systems. The temperature rise in the channel of a β-(Al0.21Ga0.79)2O3/Ga2O3 heterostructure field-effect transistor (HFET) was mapped using thermoreflectance imaging at 470 nm. First, the thermoreflectance response of the HFET channel was measured using a monochromator, revealing a maximum of the reflectance change around 470–480 nm. Thermoreflectance calibrations were then performed at 470 nm (peak of the reflectance change) and yielded an average thermoreflectance coefficient of 1.06 ± 0.07 × 10−4 K−1. Subsequent measurements of the device (power densities of 0.15–1.47 W/mm and gate-source voltage of 0 V) enabled extraction of a device-level thermal resistance of 51.1 mm·K/W in the channel at the drain-side of the gate. High-resolution, in situ scanning thermal microscopy measurements of the channel temperature rise show good agreement with and further support the thermoreflectance measurements. Finally, the thermal profile across the entire device length (metal electrodes and semiconductor channel) and width was simultaneously measured using thermoreflectance imaging at 470 nm, and the peak temperature rise was measured in the channel at the drain-side of the gate electrode.
This work demonstrates direct, rapid 2D thermal mapping measurement capabilities of the ultrawide bandgap semiconductor channel of lateral β-(AlxGa1−x)2O3/Ga2O3 transistors without sample contamination, long acquisition times, or sophisticated thermometry such as developing deep-ultra-violet compatible thermoreflectance systems. The temperature rise in the channel of a β-(Al0.21Ga0.79)2O3/Ga2O3 heterostructure field-effect transistor (HFET) was mapped using thermoreflectance imaging at 470 nm. First, the thermoreflectance response of the HFET channel was measured using a monochromator, revealing a maximum of the reflectance change around 470–480 nm. Thermoreflectance calibrations were then performed at 470 nm (peak of the reflectance change) and yielded an average thermoreflectance coefficient of 1.06 ± 0.07 × 10−4 K−1. Subsequent measurements of the device (power densities of 0.15–1.47 W/mm and gate-source voltage of 0 V) enabled extraction of a device-level thermal resistance of 51.1 mm·K/W in the channel at the drain-side of the gate. High-resolution, in situ scanning thermal microscopy measurements of the channel temperature rise show good agreement with and further support the thermoreflectance measurements. Finally, the thermal profile across the entire device length (metal electrodes and semiconductor channel) and width was simultaneously measured using thermoreflectance imaging at 470 nm, and the peak temperature rise was measured in the channel at the drain-side of the gate electrode.
The transition from the crystalline to the amorphous state has been studied in germanium thin films by observing the electroreflectance spectra related to critical points at r (E Qi E 0 +A 0 ), along the A direction (2? 1 ,.E 1 + A 1 ), and at areas with A and 2 symmetry (E 2 ). A small shift of E 0 to lower energy with increasing disorder in the crystalline state, and weak structure in the amorphous state, have been observed. The spectral positions of E l9 E 1 +A 1 and E 2 do not change with disorder in the crystalline state but these responses are completely absent in the amorphous state.Increasing attention has recently been paid to the correlation between the electronic structure of a solid and the degree of long-range order in its lattice. 1 ' 2 Many experimental results suggest that the amorphous state retains a residual energy-band structure. 3 " 5 However, little is known about its detailed features, or how it evolves from the band structure of the crystalline state as disorder is gradually introduced.We report in this Letter the electroreflectance spectra of a series of germanium films deposited onto substrates of various temperatures. In such a set of samples, the long-range order is systematically reduced towards cooler substrates, and a transition from the poly crystalline to the amorphous state is passed. Static reflectance spectra, which for each photon energy monitor the sum of all possible transitions in the entire Brillouin zone, drastically lose the sharpness of their spectr v al features as the completely disordered state is approached. 3 * 5 In electroreflectance, only transitions near localized, structuresensitive discontinuities of the electronic densityof-states function respond to the electric-field perturbation. 6 In contrast to "integral" properties, electroreflectance is therefore expected to monitor more sensitively the gradual weakening of order-dependent features in the band structure as the long-range order is reduced.In a set of evaporated germanium films, the transition from "polycrystalline" to "amorphous" occurs at a substrate temperature T s t that depends upon evaporation rate, vacuum conditions, and substrate material. Accordingly, a wide range of values T / extending from 100°C to slightly below 400°C has been reported. In this study we closely controlled the evaporation conditions, so that mainly the substrate temperature T s , varied in steps of 25°C over the range 100 ^T s ^ 500°C, determined the crystalline order of the film. Controlled by an acoustic thickness monitor (Sloan), all samples of the set are 2400 ± 200 A thick, prepared at a growth rate of 7-10 A/sec in a vacuum of (4-7)xl0~7 Torr. Three different types of substrates were coated for each temperature T s . Two consisted of single-crystal germanium, polished to a final abrasive diameter of 1 JLL, one of which subsequently was coated with an opaque layer of aluminum. The film on the third substrate, a quartz flat, served for measurements of the electron diffraction pattern and of the space-charge capacitance. T...
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.
Copyright © 2025 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.