Electrorefraction in GaAs and InGaAsP and its application to phase modulators

Alping, A.; Coldren, L.A.

doi:10.1063/1.337912

Cited by 63 publications

(14 citation statements)

References 17 publications

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“…38 The importance of these effects in device applications has led to extensive studies of these phenomena such that the relevant field-dependent constants are fairly well known for GaAs. The corresponding changes in the index of refraction from these contributions, using the maximum photoinduced displacement of the surface space charge field, are more than an order of magnitude too small to account for >-.... the observations.…”

Section: Photocarriermentioning

confidence: 99%

Picosecond surface restricted transient grating studies of carrier reaction dynamics at n-GaAs(100) interfaces

Gomez‐Jahn

Miller

1992

The Journal of Chemical Physics

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The surface restricted transient grating technique has been found to be sensitive to the Fermi level pinning surface states at the atomic interface of the native oxide layer of (100) GaAs. The sensitivity to these states is better than 10-4 of a monolayer. The grating signal associated with the surface states is eliminated by photoinduced removal of the oxide layer and hole transfer to Se-2 ions adsorbed to the surface. These results support the assignment of the signal to electronic factors associated with surface state species. The use of space charge field focusing of hole carriers to the surface has enabled a discrimination of the hole carrier reaction dynamics from those of the electron at the surface. In situ studies of interfacial hole transfer to Se-2 ions present at liquid junctions found the hole transfer time to be less than 30 ps. The selective quenching of the hole carrier through interfacial charge transfer has found that the hole carrier contributes to the optical dispersion in the 1 f-l region to approximately the same extent as the electron.

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Section: Photocarriermentioning

confidence: 99%

Picosecond surface restricted transient grating studies of carrier reaction dynamics at n-GaAs(100) interfaces

Gomez‐Jahn

Miller

1992

The Journal of Chemical Physics

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“…Numerical calculations of dn and da have been performed [57,58] for a number of semiconductors, that are useful for modulator design. Working near resonance conditions, both electrorefraction and electroabsorption effects show comparable magnitudes, their ratio depending on light frequency and electric field.…”

Section: Franz-keldysh Effectmentioning

confidence: 99%

Inorganic Electrooptic Materials

Agulló‐López

Cabrera

1994

Electrooptics

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“…More precisely, we have compared the band-filling result ( 12) with refractive-index measurements in an injection laser based on photoluminescence measurements made by Henry, Logan, and BertnessY At a wavelength of A = 1 pm, his relationship between refractive index and carrier concentration is linear, but with a slope of 6.2X 10 -21 em 3 instead of 10.2 X 10 -21 cm 3 for the band-filling result (freecarrier effects are not taken into account in his measurements). We attribute the difference to the many-body effect.…”

Section: E(e2_et)mentioning

confidence: 99%

Phase modulation in GaAs/AlGaAs double heterostructures. I. Theory

Faist

Reinhart

1990

Journal of Applied Physics

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GaAs/AlGaAs quantum well and modulationdoped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane Contribution of the bandfilling effect to the effective refractiveindex change in doubleheterostructure GaAs/AlGaAs phase modulators This work aims at a systematic study of phase modulation in GaAsl AIGaAs doubleheterostructure waveguides with different doping profiles. Both theoretical (part 1) and experimental (part II) aspects are investigated, leading to interesting new results. Phase modulation is the sum of a linear electro-optic term, a quadratic electro-optic term, and a freecarrier term. The carrier term is shown to be the sum of a plasma term, an intervalence-band term (for holes only), a band-filling term, and a band-shrinkage term, the latter being due to many-body effects. A new analytic expression for the band-filling term is derived which shows that the band-filling effect does not depend on the carrier effective mass. We prove that the band-shrinkage term is approximately half of the band-filling term, but has opposite sign. The phase modulation is computed using an overlap integral between the optical intensity and the local refractive-index difference. We also report an analytic expression for the modulation efficiency of a p-i-n junction double-heterostructure modulator. This expression is very accurate and only requires knowledge of the depletion width and the guiding parameters.6998

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Electrorefraction in GaAs and InGaAsP and its application to phase modulators

Cited by 63 publications

References 17 publications

Picosecond surface restricted transient grating studies of carrier reaction dynamics at n-GaAs(100) interfaces

Picosecond surface restricted transient grating studies of carrier reaction dynamics at n-GaAs(100) interfaces

Inorganic Electrooptic Materials

Phase modulation in GaAs/AlGaAs double heterostructures. I. Theory

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