Electrospinning Preparation of Nanostructured g-C₃N₄/BiVO₄ Composite Films with an Enhanced Photoelectrochemical Performance

Abstract

Nanostructured g-CN/BiVO composite films with an enhanced photoelectrochemical (PEC) performance have been fabricated via the facile electrospinning technique. The g-CN nanosheets can not only form heterojunctions with BiVO but also prevent the agglomeration of BiVO, helping the formation of nanostructures. The as-prepared g-CN/BiVO films exhibit good coverage and stability. The PEC performance of the g-CN/BiVO films is much more enhanced compared with that for individual BiVO films because of the enhanced electron-hole separation. The photocurrent density is 0.44 mA/cm for g-CN/BiVO films at 0.56 V in the linear sweep current-voltage test, over 10 times higher than that of individual BiVO films (0.18 mA/cm). The effects of the preparation conditions including the g-CN content, collector temperature, calcination temperature, and electrospinning time on the PEC performance were investigated, and the reasons for the effects were proposed. The optimal preparation condition was with 3.9 wt % g-CN content in the electrospinning precursor, 185 °C collector temperature, 450 °C calcination temperature, and 40 min electrospinning time. The excellent PEC performance and the facile preparation method suggest that the g-CN/BiVO films are good candidates in energy and environmental remediation area.

Kohlenstoffnitridmaterialien für photochemische Zellen zur Wasserspaltung

“…Dies wurde durch das Vermischen von CN-Schichten mit BiVO 4 -Nanopartikeln (E g % 2.53 eV), was zu einer 10-fachen Photostromzunahme führte, [6] sowie mit anderen Va nadaten [124] und mit Hämatit gezeigt. Dies wurde durch das Vermischen von CN-Schichten mit BiVO 4 -Nanopartikeln (E g % 2.53 eV), was zu einer 10-fachen Photostromzunahme führte, [6] sowie mit anderen Va nadaten [124] und mit Hämatit gezeigt.…”

“…[3] In den letzten Jahren wurden einige Fortschritte unter Verwendung von BiVO 4 -Photoanoden erreicht, die eine E g % 2.4 eV und eine Leitungsband(LB)-Kante nahe am Wasserreduktionspotential aufweisen. [4][5][6][7][8] In jüngster Zeit sind auch zahlreiche andere Halbleitermaterialien fürP EC in den Fokus gerückt, darunter Oxidnitride, [9] Metallchalkogenide [9] und kohlenstoffbasierte Materialien. [10] All diese Materialien zeigen vielversprechende Ergebnisse,j edoch steht ihre Erforschung noch immer am Anfang.T rotz signifikanter Fortschritte in diesem Bereich [8,[11][12][13] verbleiben einige Beschränkungen wie etwa Kosten, Stabilitäti nS äure/Base und Ladungstrennungseffizienz.…”

“…1h[6] [a] Abgeschieden auf leitfähiger, mit FTO oder ITO beschichteter Glasphotoanode. 1h[6] [a] Abgeschieden auf leitfähiger, mit FTO oder ITO beschichteter Glasphotoanode.…”

Enhanced Charge Transfer Process of Bismuth Vanadate Interleaved Graphitic Carbon Nitride Nanohybrids in Mediator‐Free Direct Z Scheme Photoelectrocatalytic Water Splitting

“…Moreover, forming Z‐scheme electrons transfer mechanism in heterojunctions possesses unique properties when compared to other heterojunctions mechanism (p‐n junction or Schottky junction) and as a consequence it can retain the reductive electrons in the higher CB and oxidative holes in the lower VB, resulting in not only promoted charge separation rate but also strong redox ability of photogenerated charges . Hence, the combination of BiVO 4 with another semiconductor to introduce Z‐scheme is a promising way for enhancing the PEC activity of BiVO 4 including Ag@AgCl/BiVO 4 , BiVO 4 ‐W‐WO 3 and g‐C 3 N 4 /BiVO 4 . At the same time, the metal‐free graphitic carbon nitride (g‐C 3 N 4 ) is a good visible‐light photocatalyst with narrow band‐gap (∼2.7 eV), non‐toxic properties and thermal and chemical stabilities.…”

Acid-Exfoliated g-C3 N4 Nanosheets Coated Silver Nanoparticles with Tunable Loading: An Efficient Catalyst for Visible Light Photocatalytic Reaction

“…Metal‐free graphitic carbon nitride (g‐C 3 N 4 ) is a new class of photocatalyst among a variety of VLD photocatalysts ,. As a most stable allotrope of carbon nitride, g‐C 3 N 4 , possessing layer structure like graphite, is composed of weak van der Waals force between adjacent layers ,. Typically, bulk g‐C 3 N 4 can be easily prepared by one‐step polymerization of abundant precursors such as cyanamide, dicyandiamide, melamine and urea .…”