“…Furthermore, chemiresistive sensors based on MOS materials require simple and low‐cost synthesis and fabrication methods, while providing several avenues for controlling sensing properties via nanoengineering of MOS chemical, compositional, and structural properties. [ 34 ] Until now, both p‐type (e.g., CuO [ 3,46,47 ] ) and n‐type MOS (e.g., WO 3 , [ 7,48–50 ] ZnO, [ 4,51–54 ] SnO 2 , [ 11,16,23 ] TiO 2 , [ 56,57 ] In 2 O 3 [ 12,54,55 ] ) have been widely used as gas sensing materials due to their high sensing performance.…”