Electrostatic Discharge and Cycling Effects on Ohmic and Capacitive RF-MEMS Switches

Tazzoli, Augusto; Peretti, V.; Meneghesso, G.

doi:10.1109/tdmr.2007.907422

Cited by 31 publications

(12 citation statements)

References 8 publications

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“…Furthermore, considering the graphs symmetry or translation, it is possible to study the presence of charge trapping or redistribution phenomena. More details on the adopted setups are reported in [12]. An excerpt of the complete characterization carried out on a shunt switch after growing doses of 1, 10, and 3OMrad(SiO2) protons stresses, and during the subsequent room temperature anneal, is reported in Figure 2.…”

Section: Resultsmentioning

confidence: 99%

Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications

Tazzoli

Cellere

Autizi

et al. 2009

2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems

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The impact of 2 MeV protons and 10 keV X-rays radiation stresses on electrostatically actuated ohmic RF-MEMS switches has been analyzed at increasing radiation dose and during subsequent annealing at room temperature. Small variations of electrical parameters (actuation and release voltages) have been identified, accompanied by a strong rf-performances degradation. Monte Carlo TRIM simulations have been carried out to understand the mechanisms responsible of such degradations, finding that both NIEL and ionizing damages appear to play an important role

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Section: Resultsmentioning

confidence: 99%

Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications

Tazzoli

Cellere

Autizi

et al. 2009

2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems

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“…Reliability estimation of MEMS devices has been mainly done thorough extensive Electrostatic discharge (ESD) tests 1,2 , shock and vibration tests 3,4 , fatigue and creep tests 5,6 , and aging tests through rapid thermal cycling. These tests have so far mainly been used to qualify devices.…”

Section: Introductionmentioning

confidence: 99%

“…While ESD failures are mostly dominated by the breakdown of materials, especially various oxides, in the case of semiconductor devices, in MEMS devices a number of other possible failure mechanisms such as stiction and micro-welding can be found. So far ESD testing has mainly been used to obtain the statistics of failed devices, after the end of the ESD event, and to estimate the effects of failure 1,2 ; to date, only few transient behavior studies have been reported, e.g. the dynamics of a RF MEMS switch during ESD failure has been tracked using a Laser Scanning Vibrometer (LSV) 10 .…”

Section: Introductionmentioning

confidence: 99%

ESD testing and combdrive snap-in in a MEMS tunable grating under shock and vibration

et al. 2011

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This work describes a method for tracking the dynamics of electrostatic discharge (ESD) sensitive MEMS structures during ESD events, as well as a model for determining the reduced combdrive snap-in voltage under vibration and shock. We describe our ESD test setup, based on the human body model, and optimized for high impedance devices. A brief description of the MEMS tunable grating, the test structure used here, and its operation is followed by results of the measured complex device dynamics during ESD events. The device fails at a voltage up to four times higher than that required to bring the parts into contact. We then present a model for the snap-in of combfingers under shock and vibration. We combine the results of the analytical model for combdrive snap-in developed here with a shock response model to compute the critical shock acceleration conditions that can result in combdrive snap-in as a function of the operating voltage. We discuss the validity regimes for the combdrive snap-in model and show how restricting the operation voltage below the snap-in voltage is not a sufficient criterion to ensure reliable operation especially in environments with large disturbances.

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“…Furthermore, considering the graph's symmetry or translation, it is possible to study the presence of charge trapping or redistribution phenomena. More details on the setup are reported in [21].…”

Section: Device Description and Measurement Setupmentioning

confidence: 99%

Accelerated testing of RF-MEMS contact degradation through radiation sources

Tazzoli

Barbato

Giliberto

et al. 2010

2010 IEEE International Reliability Physics Symposium

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This work aims to propose a novel method to\ud accelerate the lifetime of ohmic RF-MEMS switches by means of radiation exposure. Experimental results of proton and γ-ray irradiation were compared to cycling stresses, obtaining similar\ud degradation in electrical performances. Electrical measurements,\ud RF simulations, and AFM analysis of surface roughness were\ud carried out to verify the proposed method

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Electrostatic Discharge and Cycling Effects on Ohmic and Capacitive RF-MEMS Switches

Cited by 31 publications

References 8 publications

Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications

Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications

ESD testing and combdrive snap-in in a MEMS tunable grating under shock and vibration

Accelerated testing of RF-MEMS contact degradation through radiation sources

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